标题
Can cation vacancy defects induce room temperature ferromagnetism in GaN?
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 102, Issue 6, Pages 062411
出版商
AIP Publishing
发表日期
2013-02-14
DOI
10.1063/1.4792528
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Magnetically active vacancy related defects in irradiated GaN layers
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