Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors

标题
Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 100, Issue 19, Pages 192108
出版商
AIP Publishing
发表日期
2012-05-10
DOI
10.1063/1.4711810

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