Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices
出版年份 2012 全文链接
标题
Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 100, Issue 2, Pages 023109
出版商
AIP Publishing
发表日期
2012-01-11
DOI
10.1063/1.3675633
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