标题
Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 98, Issue 12, Pages 122102
出版商
AIP Publishing
发表日期
2011-03-22
DOI
10.1063/1.3569586
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
- (2010) Ruth Muenstermann et al. ADVANCED MATERIALS
- Formation of Schottky-type metal/SrTiO3 junctions and their resistive properties
- (2010) Hartmut Stöcker et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
- (2010) Seunghyup Lee et al. APPLIED PHYSICS LETTERS
- Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior
- (2010) Jung Ho Yoon et al. APPLIED PHYSICS LETTERS
- Ultrafast resistive switching in SrTiO3:Nb single crystal
- (2010) X. T. Zhang et al. APPLIED PHYSICS LETTERS
- Anticrosstalk characteristics correlated with the set process for α-Fe2O3/Nb–SrTiO3 stack-based resistive switching device
- (2010) Y. S. Chen et al. APPLIED PHYSICS LETTERS
- Resistive switching behaviors of ZnO nanorod layers
- (2010) APPLIED PHYSICS LETTERS
- Effects of the electroforming polarity on bipolar resistive switching characteristics of SrTiO3−δ films
- (2010) X. B. Yan et al. APPLIED PHYSICS LETTERS
- Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction
- (2010) Sungho Kim et al. APPLIED PHYSICS LETTERS
- The Resistive Switching Mechanism of Ag/SrTiO[sub 3]/Pt Memory Cells
- (2010) X. B. Yan et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Modeling for bipolar resistive memory switching in transition-metal oxides
- (2010) Ji Hyun Hur et al. PHYSICAL REVIEW B
- Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films
- (2009) Keisuke Shibuya et al. ADVANCED MATERIALS
- Resistance and superconductivity switching caused by carrier injection: Evidences of self-trapping carriers in oxide electronics
- (2009) Yuansha Chen et al. JOURNAL OF APPLIED PHYSICS
- Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
- (2009) T. Menke et al. JOURNAL OF APPLIED PHYSICS
- Difference of Oxide Hetero-structure Junctions with Semiconductor Electronic Devices
- (2008) Xiong Guang-Cheng et al. CHINESE PHYSICS LETTERS
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
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