Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions

Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy

(2011) G. Feng et al.   APPLIED PHYSICS LETTERS

Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions

(2011) H. Sato et al.   APPLIED PHYSICS LETTERS

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

(2011) D. C. Worledge et al.   APPLIED PHYSICS LETTERS

Domain Structure in CoFeB Thin Films With Perpendicular Magnetic Anisotropy

(2011) Michihiko Yamanouchi et al.   IEEE Magnetics Letters

Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures

(2010) M. Endo et al.   APPLIED PHYSICS LETTERS

A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference Scheme

(2010) Riichiro Takemura et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

(2010) S. Ikeda et al.   NATURE MATERIALS

Comparison of Synthetic Antiferromagnets and Hard Ferromagnets as Reference Layer in Magnetic Tunnel Junctions With Perpendicular Magnetic Anisotropy

(2010) S Bandiera et al.   IEEE Magnetics Letters

Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

(2008) Shoun Matsunaga et al.   Applied Physics Express

Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

(2008) S. Ikeda et al.   APPLIED PHYSICS LETTERS

Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition

(2008) Katsumi Suemitsu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS