Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

标题
Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions
作者
关键词
-
出版物
Applied Physics Express
Volume 1, Issue -, Pages 091301
出版商
IOP Publishing
发表日期
2008-08-22
DOI
10.1143/apex.1.091301

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