Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry

标题
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 99, Issue 4, Pages 043101
出版商
AIP Publishing
发表日期
2011-07-26
DOI
10.1063/1.3615288

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