Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry

Published 2011 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 4, Pages 043101
Publisher
AIP Publishing
Online
2011-07-26
DOI
10.1063/1.3615288
References
View 1 related references

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.