Local and non-local magnetoresistance with spin precession in highly doped Si

Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

(2011) Toshio Suzuki et al.   Applied Physics Express

Comparison of spin signals in silicon between nonlocal four-terminal and three-terminal methods

(2011) Tomoyuki Sasaki et al.   APPLIED PHYSICS LETTERS

Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

(2010) T. Sasaki et al.   APPLIED PHYSICS LETTERS

Evidence of Electrical Spin Injection Into Silicon Using MgO Tunnel Barrier

(2010) Tomoyuki Sasaki et al.   IEEE TRANSACTIONS ON MAGNETICS

Magnetoresistance of a Spin Metal–Oxide–Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts

(2010) Ryosho Nakane et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electrical Spin Injection into Silicon Using MgO Tunnel Barrier

(2009) Tomoyuki Sasaki et al.   Applied Physics Express

Electrical creation of spin polarization in silicon at room temperature

(2009) Saroj P. Dash et al.   NATURE

Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor

(2009) M. Tran et al.   PHYSICAL REVIEW LETTERS

Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices

(2008) Biqin Huang et al.   APPLIED PHYSICS LETTERS