Understanding the intermediate initial state in TiO2−δ/La2/3Sr1/3MnO3 stack-based bipolar resistive switching devices

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

(2011) B. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Mechanism for bipolar resistive switching in transition-metal oxides

(2010) M. J. Rozenberg et al.   PHYSICAL REVIEW B

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films

(2009) Keisuke Shibuya et al.   ADVANCED MATERIALS

Resistance and superconductivity switching caused by carrier injection: Evidences of self-trapping carriers in oxide electronics

(2009) Yuansha Chen et al.   JOURNAL OF APPLIED PHYSICS

Resistance dependence of photovoltaic effect in Au/SrTiO3:Nb(0.5 wt %) Schottky junctions

(2008) D. S. Shang et al.   APPLIED PHYSICS LETTERS

Reverse-bias-induced bipolar resistance switching in Pt∕TiO2∕SrTi0.99Nb0.01O3∕Pt devices

(2008) S. X. Wu et al.   APPLIED PHYSICS LETTERS

Difference of Oxide Hetero-structure Junctions with Semiconductor Electronic Devices

(2008) Xiong Guang-Cheng et al.   CHINESE PHYSICS LETTERS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE