Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

Competitiveness between direct and indirect radiative transitions of Ge

(2010) T.-H. Cheng et al.   APPLIED PHYSICS LETTERS

Ge-on-Si laser operating at room temperature

(2010) Jifeng Liu et al.   OPTICS LETTERS

Direct gap photoluminescence of n-type tensile-strained Ge-on-Si

(2009) Xiaochen Sun et al.   APPLIED PHYSICS LETTERS

Room temperature 16 μm electroluminescence from Ge light emitting diode on Si substrate

(2009) Szu-Lin Cheng et al.   OPTICS EXPRESS

Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bands

(2009) Vijay R D'Costa et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Molecular approaches to p- and n-nanoscale doping of Ge1−ySny semiconductors: Structural, electrical and transport properties

(2009) Junqi Xie et al.   SOLID-STATE ELECTRONICS

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

(2009) V.R. D'Costa et al.   THIN SOLID FILMS

Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys

(2008) Wan-Jian Yin et al.   PHYSICAL REVIEW B