期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 24, 期 11, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/24/11/115006
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- US Air Force [DOD AFOSR FA9550-06-01-0442]
- US Department of Energy [DE-FG36-08GO18003]
The optical properties of Ge1-ySny alloys (y similar to 0.02) grown by chemical vapor deposition on Si substrates have been studied using spectroscopic ellipsometry and photocurrent spectroscopy. The system shows a 10-fold increase in optical absorption, relative to pure Ge, at wavelengths corresponding to the C-telecommunication band (1550 nm) and a 20-fold increase at wavelengths corresponding to the L-band (1620 nm). Measurements on a series of samples with different thicknesses reveal nearly identical dielectric functions, from which the composition reproducibility of the growth method is estimated to be as good as 0.1%. It is shown that a model that includes excitonic effects reproduces the measured onset of absorption using the direct band gap E-0 as essentially the only adjustable parameter of the fit.
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