Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs

The Effect of NH[sub 3] on the Interface of HfO[sub 2] and Al[sub 2]O[sub 3] Films on GaAs(100) Surfaces

(2009) Dong Chan Suh et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric

(2008) D. Shahrjerdi et al.   APPLIED PHYSICS LETTERS

Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates

(2008) D. Shahrjerdi et al.   APPLIED PHYSICS LETTERS

Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

(2008) Hyoung-Sub Kim et al.   APPLIED PHYSICS LETTERS

Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

(2008) C. Y. Kim et al.   APPLIED PHYSICS LETTERS

Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer

(2008) InJo Ok et al.   APPLIED PHYSICS LETTERS

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high-k gate dielectrics using x-ray photoelectron spectroscopy

(2008) H. J. Oh et al.   APPLIED PHYSICS LETTERS

Inversion mode n-channel GaAs field effect transistor with high-k/metal gate

(2008) J. P. de Souza et al.   APPLIED PHYSICS LETTERS

Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces

(2008) Justin C. Hackley et al.   APPLIED PHYSICS LETTERS