Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer

出版年份 2015 全文链接

标题

作者

关键词

出版物

Volume 54, Issue 4S, Pages 04DJ08

出版商

Japan Society of Applied Physics

发表日期

2015-03-23

DOI

10.7567/jjap.54.04dj08

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