期刊
APPLIED PHYSICS LETTERS
卷 96, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3374890
关键词
carrier density; gold; II-VI semiconductors; Schottky barriers; semiconductor epitaxial layers; semiconductor-metal boundaries; surface treatment; vacancies (crystal); wide band gap semiconductors; zinc compounds
资金
- National Research Foundation [NRF-20090083660, NRF-20100000751, NRF-K20901001356-09B1200-14510]
- Korean government of Ministry of Education, Science and Technology (MEST)
The Au/ZnO Schottky contacts fabricated using H2O2-treated unintentionally doped ZnO epilayers showed an abnormal behavior in their transport properties; i.e., the background carrier density-dependent trade-off relation between the barrier height and the ideality factor was observed. This result is attributed to the difference in carrier transport mechanisms for each sample fabricated using ZnO epilayers with different background carrier concentrations; namely, the observed trade-off relation originates from a result that the difference in the distribution of oxygen vacancies near the surface and depletion regions, which depends on the initial background carrier concentration of each sample, causes the different carrier transport mechanism.
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