Fluorinated HfO2 gate dielectric engineering on In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Effects of Fluorine Incorporation on the Electrical Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3] Gate Dielectric on InP Substrate

(2010) Yen-Ting Chen et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 Å

(2009) Yen-Ting Chen et al.   APPLIED PHYSICS LETTERS

Improved electrical characteristics of TaN/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation

(2009) Yen-Ting Chen et al.   APPLIED PHYSICS LETTERS

In[sub 0.53]Ga[sub 0.47]As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al[sub 2]O[sub 3], HfO[sub 2], and LaAlO[sub 3] gate dielectrics

(2009) Han Zhao et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain

(2009) Fei Gao et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

(2008) InJo Ok et al.   APPLIED PHYSICS LETTERS

Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

(2008) Hyoung-Sub Kim et al.   APPLIED PHYSICS LETTERS

Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric

(2008) Han Zhao et al.   APPLIED PHYSICS LETTERS

High-k gate stack on germanium substrate with fluorine incorporation

(2008) Ruilong Xie et al.   APPLIED PHYSICS LETTERS

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

(2008) Y. Xuan et al.   IEEE ELECTRON DEVICE LETTERS