Article
Engineering, Electrical & Electronic
Yuanjie Lv, Yuangang Wang, Xingchang Fu, Shaobo Dun, Zhaofeng Sun, Hongyu Liu, Xingye Zhou, Xubo Song, Kui Dang, Shixiong Liang, Jincheng Zhang, Hong Zhou, Zhihong Feng, Shujun Cai, Yue Hao
Summary: This article reports the first vertical beta-Ga2O3 JBS diode, which successfully addresses the issue of sacrifice of p-type beta-Ga2O3 by using p-type NiO, achieving high breakdown voltage and low ON-resistance. Experimental results demonstrate that this diode has higher performance parameters and better combinations of forward current and breakdown voltage.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Jordan R. Nicholls, Sima Dimitrijev
Summary: The Tung model for Schottky barrier inhomogeneity fails to consider the image-force effect, which can smooth the barrier in some cases. This leads to a transition region where the diode current is intermediate between that of a homogeneous diode and one dominated by low-barrier patches. Correcting the equations for this transition region allows for more accurate modeling of practical diode characteristics.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Nanoscience & Nanotechnology
Seonyeong Kim, Dong Hoon Shin, Yong-Sung Kim, In-Ho Lee, Chang-Won Lee, Sunae Seo, Suyong Jung
Summary: The energy band alignments and material properties at the contacts between metal and 2D semiconducting transition metal dichalcogenide films are essential for electronic and optical device applications. Vertical diodes with asymmetric metal-SCTMD contact areas were used to study contact-limited charge flows in tunneling and emission transport regimes. The experimental and analytical approaches demonstrated in this research provide a powerful tool for evaluating metal-SCTMD contacts qualitatively and quantitatively.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Chen-Sheng Lin, Duncan W. E. Allsopp, Kate Cavanagh, Hei Chit Leo Tsui, Ling-Shan Yu, Wang-Nan Wang, Andrei Mihai, Bin Zou, Michelle A. Moram
Summary: This study presents a method to achieve room-temperature 335nm UV electroluminescence from a simple AlGaN-based MIS LED, avoiding the use of p-doped material and utilizing tunneling effect to generate the necessary holes in a thin AlN barrier. This design is a potential option to overcome the issue of poor thermal excitation of holes in AlGaN-based pn junction devices.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2021)
Review
Nanoscience & Nanotechnology
Zhenxing Wang, Andreas Hemmetter, Burkay Uzlu, Mohamed Saeed, Ahmed Hamed, Satender Kataria, Renato Negra, Daniel Neumaier, Max C. Lemme
Summary: The manuscript reviews diodes made of heterostructures of the 2D material graphene and conventional 3D materials, highlighting their applications in high frequency electronics and optoelectronics. It discusses the advantages of metal-insulator-graphene diodes over conventional metal-insulator-metal diodes, and the potential for graphene-based diodes to outperform traditional photodetectors. However, tailored adjustments are needed for 2D/3D diodes based on specific application requirements.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Physical
An Chen, Zhilong Wang, Xu Zhang, Letian Chen, Xu Hu, Yanqiang Han, Junfei Cai, Zhen Zhou, Jinjin Li
Summary: Reducing the contact resistance at the metal-semiconductor interface is crucial for developing high-performance electronic devices. The study found that a small interfacial dipole and the elimination of localized surface states are essential for designing advanced 2D metal-semiconductor systems with small Schottky barrier heights.
CHEMISTRY OF MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Tao Zhang, Yanni Zhang, Jincheng Zhang, Xiangdong Li, Yueguang Lv, Yue Hao
Summary: This work presents a high-performance lateral GaN metal-insulator-semiconductor (MIS) diode with a low turn-on voltage of 0.32 V, supported by in-depth theoretical calculations on current transport mechanisms and a forward conduction model. The coexistence of direct tunneling (DT) and thermionic emission (TE) contributes to the low subthreshold swing (SS), while a 1.8 nm thick Al2O3 interlayer effectively suppresses reverse leakage.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
M. U. Ashraf, Haya Khan, M. Munawar, Haleem Ud Din, M. Idrees, M. Bilal, Y. Saeed, M. Shafiq, B. Amin
Summary: The study focused on the structural and electronic properties of Carbon Sulfide and X2CO2 MXenes monolayers, as well as their metal-semiconductor contacts. It was found that the CS-X2CO2 interface formed a p-type Schottky contact with a Schottky barrier height of 0.69 eV, which could be useful for applications in FET and photodetectors devices.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Materials Science, Multidisciplinary
Wei Jia, Berardi Sensale-Rodriguez
Summary: This article discusses the potential of using lateral Schottky diodes in wide bandgap semiconductors for high-speed modulation and low-loss metamaterial configurations in order to unlock the terahertz band for future 6G wireless communications.
OPTICAL MATERIALS EXPRESS
(2022)
Article
Materials Science, Multidisciplinary
Nastaran Rizan, Hairul Anuar Tajuddin, Yee Shin Tan, Zanariah Abdullah, Azila Idris, Vengadesh Periasamy
Summary: The use of DNA in molecular electronics and biosensors has attracted much interest due to its unique self-assembling behavior. Ionic liquid ([BMIM][Ace]) is a potential solvent that ensures long-term stability of DNA structures, improving rectifying profiles in DNA-based devices.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2021)
Review
Engineering, Electrical & Electronic
Hardhyan Sheoran, Vikram Kumar, Rajendra Singh
Summary: This study comprehensively reviews the recent development of metal-semiconductor contacts on ultrawide bandgap beta-gallium oxide (beta-Ga2O3). The study starts by introducing the basic concepts of metal-semiconductor contacts and then summarizes the current literature on ohmic and Schottky contacts on beta-Ga2O3. Finally, the status of high-power Schottky diode contact on beta-Ga2O3 is presented.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Hasan Efeoglu, Abdulmecit Turut
Summary: This study experimentally investigates the current-voltage-temperature characteristics of different Au/Cu/n-Si Schottky-barrier diodes with varying copper thickness. The results show that the Schottky barrier height increases with decreasing copper thickness, while the average series resistance and ideality factor are almost independent of the thickness. These findings highlight the importance of copper thickness in determining the quality of the diodes.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Multidisciplinary
Kalaivanan Loganathan, Alberto D. Scaccabarozzi, Hendrik Faber, Federico Ferrari, Zhanibek Bizak, Emre Yengel, Dipti R. Naphade, Murali Gedda, Qiao He, Olga Solomeshch, Begimai Adilbekova, Emre Yarali, Leonidas Tsetseris, Khaled N. Salama, Martin Heeney, Nir Tessler, Thomas D. Anthopoulos
Summary: The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes hinder their deployment in emerging radio frequency (RF) electronics. However, this study demonstrates RF Schottky diodes capable of operating in the 5G frequency spectrum by combining self-aligned asymmetric nanogap electrodes with a high mobility organic semiconductor.
ADVANCED MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Yuangang Wang, Hehe Gong, Yuanjie Lv, Xingchang Fu, Shaobo Dun, Tingting Han, Hongyu Liu, Xingye Zhou, Shixiong Liang, Jiandong Ye, Rong Zhang, Aimin Bu, Shujun Cai, Zhihong Feng
Summary: By implementing a composite terminal structure with a p-NiO junction termination extension and a small-angle beveled field plate, high-performance p-NiO/ss-Ga2O3 heterojunction diodes were successfully demonstrated. This structure significantly increases the breakdown voltage of ss-Ga2O3 and achieves low ON-resistance, making it a promising candidate for various applications.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
S. Duman, A. Turut, S. Dogan
Summary: The thermal sensitivity of annealed and un-annealed Ni/n-6 H-SiC Schottky barrier diodes was studied. The results showed that the un-annealed diode exhibited linear behavior in a certain range of current levels, while the annealed diode did not. This was attributed to the formation of an inhomogeneous layer at the Ni/n-6 H-SiC interface due to thermal annealing.
SENSORS AND ACTUATORS A-PHYSICAL
(2022)
Article
Environmental Sciences
Suzana M. Blesic, D. Jean du Preez, Djordje Stratimirovic, Jelena Ajtic, M. Cynthia Ramotsehoa, Martin W. Allen, Caradee Y. Wright
ENVIRONMENTAL RESEARCH
(2020)
Article
Physics, Condensed Matter
J. Borgersen, L. Vines, Y. K. Frodason, A. Kuznetsov, H. von Wenckstern, M. Grundmann, M. Allen, J. Zuniga-Perez, K. M. Johansen
JOURNAL OF PHYSICS-CONDENSED MATTER
(2020)
Article
Biochemistry & Molecular Biology
Caradee Y. Wright, David Jean du Preez, Bice S. Martincigh, Martin W. Allen, Danielle A. Millar, Bianca Wernecke, Suzana Blesic
PHOTOCHEMISTRY AND PHOTOBIOLOGY
(2020)
Article
Medicine, Research & Experimental
Serigne N. Lo, Amelia K. Smit, David Espinoza, Anne E. Cust
Article
Environmental Sciences
Martin W. Allen, Neil Swift, Kathryn M. Nield, Ben Liley, Richard L. McKenzie
Article
Engineering, Electrical & Electronic
Hiep N. Tran, Phuong Y. Le, Billy James Murdoch, Martin W. Allen, Christopher F. McConville, James G. Partridge
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Physics, Applied
Chikezie C. Onyema, Roger J. Reeves, Martin W. Allen
Summary: MESFETs were fabricated on ZnO thin films grown via mist-CVD, using in situ intentionally oxidized AgOx SC gates to achieve high performance. These devices showed potential for producing low-cost, low operating voltage, transparent thin film transistors due to the significant increase in Schottky barrier height and passivation of oxygen vacancies at the gate-channel interface.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Chemistry, Physical
Rodrigo F. Martinez-Gazoni, Martin W. Allen, Roger J. Reeves
Summary: The study investigated the persistent photoconductivity (PPC) of high-quality SnO2 (101) films grown by molecular beam epitaxy (MBE), showing that the longest duration was achieved under high-vacuum conditions, sensitivity to pressure changes, and the dominant role of water vapor. Increasing carrier concentration significantly increased the duration, while decreasing temperature led to a significant decrease in persistent photoconductivity.
JOURNAL OF PHYSICAL CHEMISTRY C
(2021)
Article
Public, Environmental & Occupational Health
Marco Lee Solano, Samuel Robinson, Martin W. Allen, Gillian Reyes-Marcelino, David Espinoza, Brooke Beswick, Dorothy H. K. Tse, Liyang Ding, Lauren Humphreys, Cathelijne Van Kemenade, Suzanne Dobbinson, Amelia K. Smit, Anne E. Cust
Summary: Interactive educational activities using handheld dosimeters can improve primary school students' knowledge about UV radiation and sun protection. A study in Australia found that students had moderate knowledge about UV and sun protection, but their knowledge significantly improved after a short interactive educational activity using handheld UV dosimeters.
PREVENTIVE MEDICINE REPORTS
(2022)
Article
Biochemistry & Molecular Biology
Sarah E. Cole, Makenzie Hawkins, Kimberly A. Miller, Martin W. Allen, Myles Cockburn
Summary: The incidence of melanoma is increasing, especially among Hispanics in California. Childhood exposure to ultraviolet radiation is found to significantly increase the risk of melanoma. A study conducted in Los Angeles County among Hispanic students in 4th and 5th grade classrooms revealed that wanting to get a tan was associated with less time spent outside, while sun protective knowledge and family discussion of sunscreen were associated with less time spent outside. Most of the UV exposure in this population occurred at school.
PHOTOCHEMISTRY AND PHOTOBIOLOGY
(2023)
Article
Chemistry, Multidisciplinary
Jonty I. Scott, Ryan L. Adams, Rodrigo F. Martinez-Gazoni, Liam R. Carroll, Alison J. Downard, Tim D. Veal, Roger J. Reeves, Martin W. Allen
Summary: A highly scalable method for producing vertically aligned square-shaped Sb-doped SnO2 nanotubes has been reported using mist chemical vapor deposition. These nanotubes exhibit excellent structural quality and have potential applications in gas sensing and catalysis. Fabrication of square SnO2 nanotube diodes and field effect transistors has demonstrated their device potential.
Article
Engineering, Electrical & Electronic
Phuong Y. Le, Hilal Nagib, Luke A. Sylvander, Martin W. Allen, Dougal G. McCulloch, James G. Partridge, Hiep N. Tran
Summary: Volatile lateral memristors fabricated from amorphous SnO2 exhibit synaptic properties and can modulate conductance based on the characteristics of voltage pulses or UVC light. By combining light and voltage pulses, OR/AND logic functions can be achieved using a single device. The device behavior is affected by surface water chemisorption, but the functions are reliably demonstrated regardless of the ambient interaction. Simulation results suggest that these devices can enable hand-written digit recognition with over 90% accuracy when arranged in a suitable array.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Physical
Simon Astley, Di Hu, Kerry Hazeldine, Johnathan Ash, Rachel E. Cross, Simon Cooil, Martin W. Allen, James Evans, Kelvin James, Federica Venturini, David C. Grinter, Pilar Ferrer, Rosa Arrigo, Georg Held, Gruffudd T. Williams, D. Andrew Evans
Summary: Photoelectron spectroscopy is a powerful tool for characterizing semiconductor surfaces and interfaces. However, it is often limited to ultrahigh vacuum conditions and can only probe the top few atomic layers. Recent advances in instrumentation have addressed these limitations, enabling measurement at near-ambient pressures and real-time monitoring of surface processing. Nevertheless, there are still limitations due to irreversible chemical effects and reversible physical effects. This study demonstrates how real-time and near-ambient pressure photoelectron spectroscopy can be used to identify and quantify these effects.
FARADAY DISCUSSIONS
(2022)
Article
Engineering, Electrical & Electronic
Liam R. Carroll, Rodrigo F. Martinez-Gazoni, Nicola Gaston, Roger J. Reeves, Alison J. Downard, Martin W. Allen
Summary: The study investigates the covalent modification of beta-Ga2O3 surfaces with organic layers to control their surface band bending. The research shows that NP modification leads to upward band bending shifts while ODPA modification results in downward shifts in surface band bending. These findings provide valuable insights for the electronic applications of beta-Ga2O3.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Physical
Joel C. Schuurman, Alexandra R. McNeill, Rodrigo F. Martinez-Gazoni, Jonty I. Scott, Roger J. Reeves, Martin W. Allen, Alison J. Downard
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2019)
