Article
Engineering, Electrical & Electronic
Benedikt Kostka, Daniel Herwig, Michael Hanf, Christian Zorn, Axel Mertens
Summary: Degradation caused by humidity affects the blocking characteristic of an insulated gate bipolar transistor (IGBT) module, leading to an increased leakage current and/or a reduced voltage blocking capability. The proposed measurement system enables the in situ detection of decreased breakdown voltage and increased leakage current, allowing for assessment of power module degradation when installed in a converter, primarily intended for wind power converters and as part of the system start-up procedure. The working principle has been validated on predamaged power modules in laboratory experiments, with the concept proving easy to integrate into existing inverter systems at a relatively low cost.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Computer Science, Hardware & Architecture
Damodhar Rao, Narayana Y.v, Prasad V.v.k.d.v
Summary: This research work focuses on the design and performance analysis of a Bulk double gate FinFET based SRAM cell. The use of 14 nm bulk double gate FinFET transistors significantly reduces leakage current in SRAM cells. Performance analysis shows that FinFET based SRAM cells have lower leakage and improved SNM values compared to MOSFET based cells.
SUSTAINABLE COMPUTING-INFORMATICS & SYSTEMS
(2022)
Article
Engineering, Electrical & Electronic
Andrea Vici, Robin Degraeve, Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Ingrid De Wolf
Summary: An analytical approach for calculating the time-to-breakdown of metal-oxide-semiconductor (MOS) systems under different stress conditions is proposed. This method relies solely on fresh I-g V-g measurements and accurately determines the voltage, gate oxide thickness, and temperature dependencies of time-to-breakdown. By comparing these calculated values with experimental data, a comprehensive assessment of the system's performance under various operating conditions can be made. The introduced time-to-breakdown map in the {Temperature-Voltage} space allows for immediate identification of the maximum stress condition for any target lifetime.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Julien Weckbrodt, Nicolas Ginot, Christophe Batard, Stephane Azzopardi
Summary: SiC power transistors offer higher frequency and temperature operation, but their technological maturity is moderate compared to Silicon-based devices. Recent research has identified gate leakage currents as an ageing indicator, and a new method has been proposed to estimate the gate leakage current using the gate drive circuit.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Materials Science, Multidisciplinary
Enrico Di Russo, Lorenzo Rigutti
Summary: The combination of atom probe tomography (APT) and optical spectroscopy has yielded original results in the field of semiconductor nanoscale heterostructures, providing a deeper understanding of carrier localization and recombination mechanisms in quantum-well systems through statistical correlation. Photoluminescence spectroscopy (PL) can be performed on APT samples, allowing for sequential correlations on a single nanoscale object with higher precision and accuracy.
Article
Nanoscience & Nanotechnology
Nan Liu, Yi Cao, Yin-Lian Zhu, Yu-Jia Wang, Yun-Long Tang, Bo Wu, Min-Jie Zou, Yan-Peng Feng, Xiu-Liang Ma
Summary: The study presents a self-assembled uniform biphasic system as a potential stable and enduring RRAM medium, demonstrating advantages in stability, uniformity, and durability for further application in RRAM devices.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Kenji Ohmori, Shuhei Amakawa
Summary: The study demonstrates the on-wafer evaluation of white thermal and shot noise in nanoscale MOSFETs by directly sensing the drain current, without the need for a hot noise source. It proposes an empirical expression for the Fano factor that is suitable for measurement-based evaluation, allowing for more accurate and predictive noise modeling of RF MOSFETs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Gaoqaing Deng, Jun Wang, Chen Tan, Yifan Wu, Shiwei Liang, Wai Tung Ng
Summary: This paper proposes and investigates a 100-V Taper-Shielded trench Gate (TSG) power metal-oxide-semiconductor field-effect transistor (MOSFET) with superior figure-of-merit (FOM). The proposed TSG-MOSFET has a tapered gate shape to reduce gate-to-drain overlap capacitance and gate charge. The vertical drift region doping profile is enhanced through a multi-step epitaxial growth and a lightly doped n-region at the trench bottom. TCAD simulations and experiments were conducted to evaluate the device. The proposed device exhibits improved specific ON-resistance, breakdown voltage, and reverse recovery charge compared to state-of-the-art counterparts.
IET POWER ELECTRONICS
(2023)
Article
Energy & Fuels
Carlos Enrico Clement, Jai Prakash Singh, Erik Birgersson, Yan Wang, Yong Sheng Khoo
Summary: This study investigates the light induced effect of leakage current at the onset of breakdown in solar cells, finding it to be more prominent in p-type and mono c-Si cells. A proposed split-cell model offers a simple approach for handling partial shading in p-type cells, which is not captured by current breakdown models.
IEEE JOURNAL OF PHOTOVOLTAICS
(2021)
Article
Chemistry, Multidisciplinary
Heebeom Ahn, Keehoon Kang, Younggul Song, Woocheol Lee, Jae-Keun Kim, Junwoo Kim, Jonghoon Lee, Kyeong-Yoon Baek, Jiwon Shin, Hyungbin Lim, Yongjin Kim, Jae Sung Lee, Takhee Lee
Summary: Organometal halide perovskites have shown potential as material systems for resistive memory devices due to their unique optical and electrical properties. Understanding the formation and structure of conducting filaments is crucial for stable operation of memory devices.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Xuanze Zhou, Qi Liu, Guangwei Xu, Kai Zhou, Xueqiang Xiang, Qiming He, Weibing Hao, Guangzhong Jian, Xiaolong Zhao, Shibing Long
Summary: A variation of lateral doping (VLD) technique was proposed to enhance blocking voltage and ON-resistance properties in lateral beta-Ga2O3 MOSFET, achieving enhancement-mode operation and significantly higher transconductance compared to uniformly doped (UD) transistor. The design also resulted in suppressed OFF-state electric field and higher blocking voltage, with a power figure of merit reaching 332.7 MW/cm(2). This new structure offers a new design strategy for high-power beta-Ga2O3 MOSFETs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
William R. Jensen, Shanelle N. Foster
Summary: An online gate oxide degradation detection method is proposed to reduce the reliability concern of using MOSFET switching devices. Gate oxide degradation causes a delay in phase current rise, affecting the voltage commands calculated in the controller. Through analysis, simulation, and experiment, it is shown that SVPWM duty cycle commands reflect the delay in phase current rise caused by gate oxide degradation.
IEEE TRANSACTIONS ON TRANSPORTATION ELECTRIFICATION
(2021)
Article
Engineering, Electrical & Electronic
Jiaxing Wei, Siyang Liu, Rongcheng Lou, Lizhi Tang, Ran Ye, Long Zhang, Xiaobing Zhang, Weifeng Sun, Song Bai
Summary: The degradation of electrical parameters for SiC power MOSFETs under repetitive switching stress is mainly caused by the injection of negative charges, leading to an increase in threshold voltage and ON-state resistance. Different stages during the switching process have varying effects on the device, with the conduction stage being the main stage for charge injection. Additionally, the research proves the robustness of SiC power MOSFETs under repetitive out-of-SOA switching conditions.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2021)
Article
Nanoscience & Nanotechnology
Yaqi Fang, Hongxain Tu, Lei Jia, Enwen Li, Lei Liu, Guoli Wang, Xiaoxing Zhang
Summary: There are many sphere-plane air gaps in valve halls of extra-high-voltage and ultra-high-voltage converter stations. Accurate prediction of discharge characteristics in these gaps is important for selecting shielding structure and determining dielectric strength. This paper proposes a computational model based on corona inception and continuous leader inception processes to calculate the discharge voltage of a sphere-plane air gap under positive switching impulse voltage. The model's accuracy is verified through experiments, showing a maximum error of 7.3%. The results also indicate that the leader inception voltage and time increase with larger spherical electrode radius at the same gap distance, and larger gaps require higher leader inception voltage and faster leader inception time for identical spherical electrodes.
Article
Engineering, Electrical & Electronic
Shivam Sharma, Lingyu Meng, A. F. M. Anhar Uddin Bhuiyan, Zixuan Feng, David Eason, Hongping Zhao, Uttam Singisetti
Summary: This letter presents the vacuum annealing of lateral field-plated beta-Ga2O3 MOSFETs, which leads to significant current recovery and improvement in the on-state resistance after damage induced by Reactive Ion Etching (RIE). MOSFETs based on Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) grown beta-Ga2O3 wafers are fabricated and characterized to study the effects of vacuum annealing. It is observed that vacuum annealed devices show no reduction in breakdown voltages compared to polymer passivated MOSFETs, and the devices exhibit up to 10 times reduction in on-state resistance compared to previously reported SU-8 passivated devices.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Mario Lanza, H-S Philip Wong, Eric Pop, Daniele Ielmini, Dimitri Strukov, Brian C. Regan, Luca Larcher, Marco A. Villena, J. Joshua Yang, Ludovic Goux, Attilio Belmonte, Yuchao Yang, Francesco M. Puglisi, Jinfeng Kang, Blanka Magyari-Kope, Eilam Yalon, Anthony Kenyon, Mark Buckwell, Adnan Mehonic, Alexander Shluger, Haitong Li, Tuo-Hung Hou, Boris Hudec, Deji Akinwande, Ruijing Ge, Stefano Ambrogio, Juan B. Roldan, Enrique Miranda, Jordi Sune, Kin Leong Pey, Xing Wu, Nagarajan Raghavan, Ernest Wu, Wei D. Lu, Gabriele Navarro, Weidong Zhang, Huaqiang Wu, Runwei Li, Alexander Holleitner, Ursula Wurstbauer, Max C. Lemme, Ming Liu, Shibing Long, Qi Liu, Hangbing Lv, Andrea Padovani, Paolo Pavan, Ilia Valov, Xu Jing, Tingting Han, Kaichen Zhu, Shaochuan Chen, Fei Hui, Yuanyuan Shi
ADVANCED ELECTRONIC MATERIALS
(2019)
Article
Materials Science, Multidisciplinary
Ray Jia Hong Ng, Ravikumar Venkat Krishnan, Zhaogang Dong, Jinfa Ho, Hailong Liu, Qifeng Ruan, Kin Leong Pey, Joel K. W. Yang
OPTICAL MATERIALS EXPRESS
(2019)
Article
Instruments & Instrumentation
A. Ranjan, K. L. Pey, S. J. O'Shea
REVIEW OF SCIENTIFIC INSTRUMENTS
(2019)
Article
Engineering, Electrical & Electronic
A. Ranjan, N. Raghavan, F. M. Puglisi, S. Mei, A. Padovani, L. Larcher, K. Shubhakar, P. Pavan, M. Bosman, X. X. Zhang, S. J. O'Shea, K. L. Pey
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Engineering, Electrical & Electronic
S. Mei, M. Bosman, K. Shubhakar, N. Raghavan, L. Ming, K. L. Pey
MICROELECTRONIC ENGINEERING
(2019)
Article
Nanoscience & Nanotechnology
Alok Ranjan, Sean J. O'Shea, Michel Bosman, Nagarajan Raghavan, Kin Leong Pey
ACS APPLIED MATERIALS & INTERFACES
(2020)
Review
Chemistry, Multidisciplinary
Mario Lanza, Rainer Waser, Daniele Ielmini, J. Joshua Yang, Ludovic Goux, Jordi Sune, Anthony Joseph Kenyon, Adnan Mehonic, Sabina Spiga, Vikas Rana, Stefan Wiefels, Stephan Menzel, Ilia Valov, Marco A. Villena, Enrique Miranda, Xu Jing, Francesca Campabadal, Mireia B. Gonzalez, Fernando Aguirre, Felix Palumbo, Kaichen Zhu, Juan Bautista Roldan, Francesco Maria Puglisi, Luca Larcher, Tuo-Hung Hou, Themis Prodromakis, Yuchao Yang, Peng Huang, Tianqing Wan, Yang Chai, Kin Leong Pey, Nagarajan Raghavan, Salvador Duenas, Tao Wang, Qiangfei Xia, Sebastian Pazos
Summary: RS devices face challenges in variability and reliability issues, and the current method of endurance evaluation shows high inaccuracy and unreliability. A new method proposed in this article aims to provide a more accurate characterization of endurance in RS devices, which could lead to more reliable literature and accelerate their integration in commercial products.
Article
Physics, Applied
Fernando Leonel Aguirre, Alok Ranjan, Nagarajan Raghavan, Andrea Padovani, Sebastian Matias Pazos, Nahuel Vega, Nahuel Muller, Mario Debray, Joel Molina-Reyes, Kin Leong Pey, Felix Palumbo
Summary: By using radiation fluence to adjust defect density and conducting statistical studies on soft, progressive, and hard breakdown, the BD sequence in high-K/interfacial layer stacks for time-dependent dielectric breakdown can be accurately inferred.
APPLIED PHYSICS EXPRESS
(2021)
Article
Engineering, Electrical & Electronic
Alok Ranjan, Nagarajan Raghavan, Matthew Holwill, Kenji Watanabe, Takashi Taniguchi, Kostya S. Novoselov, Kin Leong Pey, Sean J. O'Shea
Summary: The breakdown field of thin hexagonal boron nitride (h-BN) is analyzed by conduction atomic force microscopy, showing its suitability as a gate dielectric and the influence of 2D layering on breakdown effects. The breakdown voltage statistics follow a tight monomodal Weibull distribution, indicating non-random defect generation preferentially at specific locations.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
J. Tan, J. H. Lim, J. H. Kwon, V. B. Naik, N. Raghavan, K. L. Pey
Summary: The variability in switching voltage (Vc) of STT-MRAM has been studied with regards to temperature, MTJ diameter, bias pulse-width, and backhopping (BH). It was found that Vc distributions are highly skewed with temperature and pulse-width changes, while BH of the MTJ bits increases with higher temperature, longer pulse-width, and smaller MTJ diameter. The switching and BH performances of a 40 Mb embedded MRAM macro with different MTJ diameters were also demonstrated.
SOLID-STATE ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Bejoy Sikder, Jia Hao Lim, Mondol Anik Kumar, Andrea Padovani, Michael Haverty, Uday Kamal, Nagarajan Raghavan, Luca Larcher, Kin-Leong Pey, Md Zunaid Baten
Summary: The device-to-device variability of CoFeB/MgO based STT-MRAMs has been studied, with the influence of metal-induced gap states at the ferromagnet-tunnel barrier interface found to significantly impact the effective energy barrier height of these devices regardless of their diameters. Therefore, highly scaled STT-MRAMs are more susceptible to device-to-device variations resulting from microscopic variations in the interface quality.
IEEE ELECTRON DEVICE LETTERS
(2021)
Proceedings Paper
Education, Scientific Disciplines
K. L. Pey, Lucienne Blessing, Bige Tuncer
2020 IEEE FRONTIERS IN EDUCATION CONFERENCE (FIE 2020)
(2020)
Proceedings Paper
Engineering, Electrical & Electronic
L. Luo, K. Shubhakar, S. Mei, N. Raghavan, F. Zhang, D. Shum, K. L. Pey
2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
(2020)
Proceedings Paper
Engineering, Electrical & Electronic
Kin Leong Pey, Alok Ranjan, Nagarajan Raghavan, Sean O'Shea
2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE)
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
K. L. Pey, A. Ranjan, N. Raghavan, K. Shubhakar, S. J. O'Shea
2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
(2019)
