Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy

Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio

(2009) M. L. Lee et al.   APPLIED PHYSICS LETTERS

Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy

(2009) A. L. Yang et al.   APPLIED PHYSICS LETTERS

Valence band offset of MgO∕InN heterojunction measured by x-ray photoelectron spectroscopy

(2008) P. F. Zhang et al.   APPLIED PHYSICS LETTERS

Indium-oxide polymorphs from first principles: Quasiparticle electronic states

(2008) F. Fuchs et al.   PHYSICAL REVIEW B

Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

(2008) Aron Walsh et al.   PHYSICAL REVIEW LETTERS

Surface Electron Accumulation and the Charge Neutrality Level inIn2O3

(2008) P. D. C. King et al.   PHYSICAL REVIEW LETTERS

The influence of conduction band plasmons on core-level photoemission spectra of InN

(2008) P.D.C. King et al.   SURFACE SCIENCE