期刊
APPLIED PHYSICS LETTERS
卷 94, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3081042
关键词
hafnium compounds; high-k dielectric thin films; MOS memory circuits; nanostructured materials; random-access storage; self-assembly; silicon compounds; sputter deposition; tungsten
资金
- Ministry of Education, Culture, Sports, Science, and Technology of Japan [18063002]
- Grants-in-Aid for Scientific Research [18063002] Funding Source: KAKEN
In this letter, the formation of high density tungsten nanodots (W-NDs) embedded in silicon nitride via a self-assembled nanodot deposition is demonstrated. In this method, tungsten and silicon nitride are cosputtered in high vacuum rf sputtering equipment. The W-NDs with small diameters (1-1.5 nm) and high density (similar to 1.3x10(13)/cm(2)) were achieved easily by controlling W composition; this is the ratio of total area of W chips to that of silicon nitride target. The metal-oxide-semiconductor memory device was fabricated with high density W-NDs floating gate and high-k HfO(2) blocking dielectric. A wide range memory window (0-29 V) was obtained after bidirectional gate voltages sweeping with range of +/- 1-+/- 23 V. It is feasible to design the memory window with propriety power consumption for nonvolatile memory application.
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