☆ 4.5 Article

Morphology Evolution of Pulsed-Flux Ga-Polar GaN Nanorod Growth by Metal Organic Vapor Phase Epitaxy and Its Nucleation Dependence

APPLIED PHYSICS EXPRESS (2013)

期刊

APPLIED PHYSICS EXPRESS

卷 6, 期 7, 页码 -

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IOP PUBLISHING LTD

DOI: 10.7567/APEX.6.075501

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Physics, Applied

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Core Technology Program for Next Generation Energy of Research Institute for Solar and Sustainable Energies (RISE), GIST

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We fabricated selectively grown Ga-polar GaN nanorods by optimizing metal organic vapor phase epitaxy (MOVPE) growth parameters using continuous-and pulsed-mode approaches. Nucleation layers were grown using continuous mode with H-2 or N-2 as carrier gas, which resulted in pyramidal or hexagonal shapes, respectively. The growth mechanism of nanorods was further studied for the nucleation layer grown with the H-2 case, in which the pyramidal shape of the nucleation layer was observed to be flattened during the initial step of pulsed-mode growth and then evolved into nanorods by Ga clustering on the top c-plane. (C) 2013 The Japan Society of Applied Physics

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