Ultrathin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
Ultrathin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
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