Photoluminescence study of nitrogen-doped p-type Mg x Zn1−x O nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy

Spectral and Spatial Luminescence Distribution ofm-Plane ZnO Epitaxial Films Containing Stacking Faults: A Cathodoluminescence Study

(2013) Wan-Hsien Lin et al.   Applied Physics Express

Shallow acceptor complexes in p-type ZnO

(2013) J. G. Reynolds et al.   APPLIED PHYSICS LETTERS

ZnO p-n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires

(2013) Jian Huang et al.   Advanced Optical Materials

Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition

(2012) S. Yang et al.   APPLIED PHYSICS LETTERS

Robust low resistivity p-type ZnO:Na films after ultraviolet illumination: The elimination of grain boundaries

(2012) S. S. Lin   APPLIED PHYSICS LETTERS

Temperature-dependent photoluminescence of ZnO films codoped with tellurium and nitrogen

(2012) Kun Tang et al.   JOURNAL OF APPLIED PHYSICS

p-Type Conductivity in N-Doped ZnO: The Role of theNZn−VOComplex

(2012) Lei Liu et al.   PHYSICAL REVIEW LETTERS

Impact of Mixture Gas Plasma of N$_{2}$ and O$_{2}$ as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy

(2011) Hiroyuki Kato et al.   Applied Physics Express

Exciton Localization Behaviors of Basal Stacking Faults in a-Plane AlGaN Alloys

(2011) Huei-Min Huang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Nitrogen is a deep acceptor in ZnO

(2011) M. C. Tarun et al.   AIP Advances

Investigation on the formation mechanism of p-type Li–N dual-doped ZnO

(2010) B. Y. Zhang et al.   APPLIED PHYSICS LETTERS

Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

(2010) K. Nakahara et al.   APPLIED PHYSICS LETTERS

Temperature behavior of electron-acceptor transitions and oxygen vacancy recombinations in ZnO thin films

(2010) Xiangdong Meng et al.   JOURNAL OF APPLIED PHYSICS

Doping Asymmetry Problem in ZnO: Current Status and Outlook

(2010) Vitaliy Avrutin et al.   PROCEEDINGS OF THE IEEE

Why nitrogen cannot lead to p-type conductivity in ZnO

(2009) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

(2009) P. Corfdir et al.   JOURNAL OF APPLIED PHYSICS

Electrically pumped ultraviolet ZnO diode lasers on Si

(2008) Sheng Chu et al.   APPLIED PHYSICS LETTERS

Microwave ZnO Thin-Film Transistors

(2008) Burhan Bayraktaroglu et al.   IEEE ELECTRON DEVICE LETTERS

Two-layer Hall-effect model with arbitrary surface-donor profiles: application to ZnO

(2008) D. C. Look   JOURNAL OF APPLIED PHYSICS

Nitrogen incorporation in homoepitaxial ZnO CVD epilayers

(2008) Stefan Lautenschlaeger et al.   Physica Status Solidi-Rapid Research Letters

Stacking fault related3.31−eVluminescence at130−meVacceptors in zinc oxide

(2008) M. Schirra et al.   PHYSICAL REVIEW B