Response to “Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM”
出版年份 2012 全文链接
标题
Response to “Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM”
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume 25, Issue 2, Pages 165-167
出版商
Wiley
发表日期
2012-10-19
DOI
10.1002/adma.201203771
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
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- Mechanism for resistive switching in an oxide-based electrochemical metallization memory
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- Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film
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- Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament
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- Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices
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- Observation of conducting filament growth in nanoscale resistive memories
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- In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching
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- Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments
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- Electrochemical metallization memories—fundamentals, applications, prospects
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- Atomic switches: atomic-movement-controlled nanodevices for new types of computing
- (2011) Takami Hino et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
- (2010) Qi Liu et al. ACS Nano
- Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells
- (2010) Chang-Po Hsiung et al. ACS Nano
- Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor
- (2010) Zhi Xu et al. ACS Nano
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
- (2009) Yu Chao Yang et al. NANO LETTERS
- Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications
- (2009) Yan Wang et al. NANOTECHNOLOGY
- On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt
- (2008) Weihua Guan et al. APPLIED PHYSICS LETTERS
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