A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors

出版年份 2018 全文链接

标题

作者

关键词

出版物

Volume 6, Issue -, Pages 189-194

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2017-12-28

DOI

10.1109/jeds.2017.2787137

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