Investigation of Single-Bit and Multiple-Bit Upsets in Oxide RRAM-Based 1T1R and Crossbar Memory Arrays

出版年份 2015 全文链接

标题

作者

关键词

出版物

Volume 62, Issue 5, Pages 2294-2301

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2015-09-24

DOI

10.1109/tns.2015.2465164

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