Integration of TmSiO/HfO2 Dielectric Stack in Sub-nm EOT High-k/Metal Gate CMOS Technology

标题
Integration of TmSiO/HfO2 Dielectric Stack in Sub-nm EOT High-k/Metal Gate CMOS Technology
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 3, Pages 934-939
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2015-02-05
DOI
10.1109/ted.2015.2391179

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