期刊
THIN SOLID FILMS
卷 660, 期 -, 页码 828-833出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2018.03.027
关键词
Resistive switching; Nanorods; Gallium; Zinc oxide; Conductive-bridge random-access memory; Chemical solution deposition
类别
资金
- Ministry of Science and Technology, Taiwan [MOST 105-2221-E-009-143-MY3, MOST-107-2633-E-009-003]
The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 10(4) s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据