Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation

Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

(2017) D. S. Ponomarev et al.   SEMICONDUCTORS

Electrical and thermal properties of photoconductive antennas based on In x Ga1 – x As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation

(2017) D. S. Ponomarev et al.   SEMICONDUCTORS

Photoluminescence of heterostructures containing an In x Ga1–x As quantum well with a high in content at different excitation powers

(2015) D. V. Lavrukhin et al.   SEMICONDUCTORS

Photoluminescence properties of modulation-doped In x Al1–x As/In y Ga1–y As/In x Al1–x As structures with strained inas and gaas nanoinserts in the quantum well

(2015) G. B. Galiev et al.   SEMICONDUCTORS

Low temperature grown photoconductive antennas for pulsed 1060 nm excitation: Influence of excess energy on the electron relaxation

(2014) R. J. B. Dietz et al.   Journal of Infrared Millimeter and Terahertz Waves

MHEMT with a power-gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure

(2014) D. V. Lavrukhin et al.   SEMICONDUCTORS

64 μW pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions

(2013) Roman J. B. Dietz et al.   APPLIED PHYSICS LETTERS

Low Temperature Grown Be-doped InGaAs/InAlAs Photoconductive Antennas Excited at 1030 nm

(2013) R. J. B. Dietz et al.   Journal of Infrared Millimeter and Terahertz Waves

Significant performance enhancement in photoconductive terahertz optoelectronics by incorporating plasmonic contact electrodes

(2013) C.W. Berry et al.   Nature Communications

Electrical characterization and modelling of n–n Ge-Si heterojunctions with relatively low interface state densities

(2012) R. Peibst et al.   JOURNAL OF APPLIED PHYSICS

THz generation at 155 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions

(2011) Roman J. B. Dietz et al.   OPTICS EXPRESS

Next generation 15 µm terahertz antennas: 
mesa-structuring of 
InGaAs/InAlAs photoconductive layers

(2010) H. Roehle et al.   OPTICS EXPRESS

1.55μm ultrafast photoconductive switches based on ErAs:InGaAs

(2008) F. Ospald et al.   APPLIED PHYSICS LETTERS

All-fiber terahertz time-domain spectrometer operating at 1.5 μm telecom wavelengths

(2008) B. Sartorius et al.   OPTICS EXPRESS