Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

标题
Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation
作者
关键词
-
出版物
SEMICONDUCTORS
Volume 51, Issue 4, Pages 509-513
出版商
Pleiades Publishing Ltd
发表日期
2017-04-20
DOI
10.1134/s1063782617040170

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