4.4 Article

Unveiling polytype transformation assisted growth mechanism in boron carbide nanowires

期刊

JOURNAL OF CRYSTAL GROWTH
卷 481, 期 -, 页码 11-17

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2017.10.013

关键词

Boron carbide nanowire; Growth mechanism; Volumetric diffusion model; Diffusion energy barrier

资金

  1. U.S. National Science Foundation [CMMI-1418696]

向作者/读者索取更多资源

We demonstrate direct evidence that the lattice distortion, induced by boron carbide (BxCy) stoichiometry, assists the growth of boron carbide nanowires. The transformation between different polytypic boron carbide phases lowers the energy barrier for boron diffusion, promoting boron migration in the nanowire growth. An atomistic mass transport model has been established to explain such volume-diffusion-induced nanowire growth which cannot be explained by the conventional surface diffusion model alone. These findings significantly advance our understanding of nanowire growth processes and mass transport mechanisms and provide new guidelines for the design of nanowire-structured devices. (C) 2017 Elsevier B.V. All rights reserved.

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