Atomistic tight-binding study of contact resistivity in Si/SiGe PMOS Schottky contacts

标题
Atomistic tight-binding study of contact resistivity in Si/SiGe PMOS Schottky contacts
作者
关键词
-
出版物
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume -, Issue -, Pages 1-1
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2018-06-02
DOI
10.1109/tnano.2018.2840836

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