Article
Chemistry, Inorganic & Nuclear
Tong Zhao, Marvin A. Kraft, Wolfgang G. Zeier
Summary: A series of halide mixed solid solutions of Na3InCl6-xBrx (0≤x≤2) were successfully synthesized by ball milling and subsequent annealing, inspired by the significant improvement in transport property of anion-substituted lithium metal halides. The Na3InCl6-xBrx solid solution series crystallizes in a monoclinic P2(1)/n phase through milling, while the subsequent annealing transforms it into a trigonal P3 1c phase. The ionic conductivity in the Na3InCl6-xBrx series is slightly improved by halide substitution, indicating that mixed halide compositions and structural changes have an impact on ionic transport, although less strongly than in lithium analogues such as Li3YCl6-xBrx and Li3InCl6-xBrx.
INORGANIC CHEMISTRY
(2023)
Article
Chemistry, Physical
Seung Woo Han, Moo Whan Shin
Summary: This study fabricates a high-performance flexible RRAM device using a precisely controlled UV laser annealing process, which changes the concentration of O Frenkel defect pairs in the ZnO layer and produces a ZnO/Al mixed interface layer with high quality oxygen reservoirs. The laser-annealed flexible RRAM shows stable resistive switching, performance enhancement, high on/off ratio, cycling endurance, and low power consumption, even at a bending radius of up to 5 mm.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Physical
Yirong Gao, Nana Li, Yifan Wu, Wenge Yang, Shou-Hang Bo
Summary: The Meyer-Neldel rule reveals the correlation between activation energy E-a and pre-factor σ(0), providing guidance for searching fast ionic conductors. Lithium, sodium, and magnesium ionic conductors are categorized into three types based on the relative magnitude of Δ(0) and the thermal energy (k(B)T) at the application temperature. The optimization of σ by tuning E-a for these types of ionic conductors is elaborated.
ADVANCED ENERGY MATERIALS
(2021)
Article
Computer Science, Hardware & Architecture
Sina Sayyah Ensan, Swaroop Ghosh
Summary: This paper introduces a RRAM-based in-memory computing approach called ReLOPE, which achieves a 97% accuracy in solving partial differential equation problems. By utilizing shifters and programming other RRAMs, the operating range and accuracy of ReLOPE can be expanded, leading to a 31.4x energy reduction compared to software solvers with only 3% accuracy loss.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
(2021)
Article
Engineering, Electrical & Electronic
Ruofei Hu, Jianshi Tang, Yue Xi, Zhixing Jiang, Yuyao Lu, Bin Gao, He Qian, Huaqiang Wu
Summary: A nitrogen-oxyanion-doped hafnium oxide RRAM with improved forming voltage, on/off ratio, and endurance is demonstrated. The critical electric field of N-doped RRAM for forming is 40% lower than that of undoped RRAM. The N-doped RRAM achieves 3x improvement in on/off ratio and 10x improvement in endurance at the forming voltage of 2 V, which is suitable for integration with advanced silicon technology nodes.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Yu-Bo Wang, Ting-Chang Chang, Shih-Kai Lin, Pei-Yu Wu, Yong-Ci Zhang, Yung-Fang Tan, Wen-Chung Chen, Chung-Wei Wu, Sheng-Yao Chou, Kuan-Ju Zhou, Li-Chuan Sun, Xin-Ying Tsai, Simon M. Sze
Summary: This work proposes a forming-free HfO2-based RRAM using X-ray irradiation, which overcomes the need for a larger forming voltage in the conventional forming process with scaling. Additionally, large irradiation area benefits mass production of memory devices. The forming-free device shows better memory window and comparable reliability compared to the device without X-ray irradiation. Through current-fitting technique and irradiation experiments, a physical model is proposed to explain the mechanism of forming-free RRAM from X-ray irradiation.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Physical
Hee Won Suh, Dong Su Kim, Ji Hoon Choi, Hak Hyeon Lee, Kun Woong Lee, Sung Hyeon Jung, Won Seok Yang, Jeong Jae Kim, Ji Sook Yang, Ho Seong Lee, Hyung Koun Cho
Summary: In this study, a unique crossbar array structure was proposed, which can be independently driven through the novel design of a multilayer RRAM. The ANPs-Cu2O active layers prepared by electrodeposition showed different set voltages and uniform reset voltages. The VCu-controlled DALs effectively prevented reverse current and achieved selector-less RRAM. The experimental results demonstrated that the array exhibited excellent memory performance and endurance without interfering with adjacent cells.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Meng-Hung Tsai, Chia-Jung Shih, Che-Wei Chang, Yu-Tseng Chu, You-Shen Wu, Cheng-Liang Huang
Summary: In this work, we propose that the band gap of amorphous Nb2O5 thin films can be narrowed, and this concept is validated by fabricating amorphous Nb2O5 based resistive random-access memory devices. The effects of Mn dopants and temperature on the conduction mechanism of the Nb2O5-based devices are investigated, and it is demonstrated that oxygen vacancies dominate the conduction mechanism of Mn-doped Nb2O5-based devices. X-ray photoelectron spectroscopy analysis reveals that the addition of Mn promotes the oxidation of Nb, offering significant benefits for improving the performance of RRAM memory.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
E. R. Hsieh, X. Zheng, B. Q. Le, Y. C. Shih, R. M. Radway, M. Nelson, S. Mitra, S. Wong
Summary: In this research, a 1MBit array of 1-Transistor-8-Resistive RAM (1T8R) memory was demonstrated using a foundry logic technology. By employing a gradual SET/RESET programming scheme, sixteen conductance levels are stored in each RRAM, achieving a 1T8R array with 4 bits per RRAM. The study reported SET/RESET endurance of 100K cycles and 10-year retention at 110 degrees C.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Jeong Hyun Yoon, Young-Woong Song, Wooho Ham, Jeong-Min Park, Jang-Yeon Kwon
Summary: With the era of big data, the traditional von Neumann architecture is insufficient due to high latency and energy consumption. Neuromorphic computing, imitating biological neurons for parallel processing, is a promising solution. Resistive random access memory (RRAM) with fast-switching speed and scalability is a potential candidate. However, devices excelling in all aspects are rarely proposed.
Article
Chemistry, Physical
Peng Du, Nana Li, Xiao Ling, Zhijun Fan, Artur Braun, Wenge Yang, Qianli Chen, Arthur Yelon
Summary: Proton conductivity in Y-doped BaMO3 follows the Meyer-Neldel rule, indicating that tuning lattice vibration frequency can enhance proton conductivity at low temperatures. The conductivities intersect at an isokinetic temperature, where proton conductivity is independent of activation energy, suggesting the importance of lattice properties in proton conduction mechanism. It is suggested that materials with stiff lattices and high isokinetic temperature can achieve improved proton conductivity at lower temperatures.
ADVANCED ENERGY MATERIALS
(2022)
Article
Biochemistry & Molecular Biology
Jin Mo Kim, Sung Won Hwang
Summary: Flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD layer were investigated for developing resistive random access memory (RRAM) devices. The resistive switching behavior of composites and hybrid bilayers based on graphene quantum dots and HfOx was explored to improve electrical properties. Increasing the concentration of PVP-GQD led to changes in V-f and decreased the depth of interfacial defects, facilitating the electrophoresis of Al+ ions to the PVP GQD layer and HfOx thin film.
Article
Computer Science, Information Systems
Martin Omana, Sejuti Bardhan, Cecilia Metra
Summary: This paper discusses the impact of selector faults in ReRAMs on the operation of crossbar memory arrays, highlighting that such faults can cause a large number of errors. The current error correction capabilities are insufficient, therefore new solutions are needed to address selector faults.
IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTING
(2022)
Article
Chemistry, Multidisciplinary
Tianqi Yu, Yong Fang, Xinyue Chen, Min Liu, Dong Wang, Shilin Liu, Wei Lei, Helong Jiang, Suhaidi Shafie, Mohd Nazim Mohtar, Likun Pan, Zhiwei Zhao
Summary: In this study, a novel carbon quantum dots (CQDs)-based memristor is proposed for neuromorphic computing. Unlike other models, the resistance switching mechanism of CQD-based memristors is speculated to be due to the conductive path caused by the hybridization state transition of carbon domains. This mechanism avoids the formation of random conductive filaments and shows remarkable uniform switching characteristics. The accuracy recognition rate of MNIST handwriting using this new carbon-based memristor can reach up to 96.7%, which provides new possibilities for brain-like computing.
MATERIALS HORIZONS
(2023)
Article
Engineering, Electrical & Electronic
Chih-Ying Chen, Yu-Hsiu Feng, Hong-Lin Lu, Feng-En Chang, Jui-Yuan Chen
Summary: In this study, an integrated structure called one phase-change memory one resistive random access memory (1P1R) was proposed to suppress the sneak current during stacking. The 1P1R device remained in a high resistance state to suppress the sneak current, and switched to a working state to write/read its state. The feasibility of the 1P1R structure was confirmed through electrical measurement, and the property analysis provided insight into its speculated mechanism. The results demonstrated that the novel 1P1R structure could effectively suppress sneak current, showing potential for 3D IC manufacturing.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Ange Liang, Jingwei Zhang, Fang Wang, Yutong Jiang, Kai Hu, Xin Shan, Qi Liu, Zhitang Song, Kailiang Zhang
Summary: Flexible memristors based on HfOx were fabricated on PEN substrates to simulate various bio-synapse functions, showing robust flexibility and excellent performance. The device exhibited symmetrical, linear characteristics and excellent uniformity at low power consumption. Essential synaptic behaviors were achieved in the device.
Article
Engineering, Electrical & Electronic
Jikai Lu, Yue Li, Zihao Xuan, Han Xu, Shuyu Wu, Zhongrui Wang, Shibing Long, Qi Liu, Dashan Shang
Summary: In this study, electrolyte-gated transistors (EGTs) were used as building blocks to implement a spiking neural network (SNN) for efficient information processing. The SNN achieved high accuracy in recognizing handwritten alphabets and demonstrated energy efficiency, paving the way for future energy-efficient neuromorphic computing.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Yongzhou Wang, Hui Xu, Wei Wang, Xumeng Zhang, Zuheng Wu, Ran Gu, Qingjiang Li, Qi Liu
Summary: In this letter, the authors present a configurable neuron constructed using Memristors, which have simple structures and high-density integration. They design a memristor with a tunable threshold and demonstrate its ability to construct configurable neurons with different response curves. The results suggest that the device is suitable for maintaining homeostasis and improving the stability of computing systems.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Chemistry, Physical
Peng Yuan, Ge-Qi Mao, Yan Cheng, Kan-Hao Xue, Yunzhe Zheng, Yang Yang, Pengfei Jiang, Yannan Xu, Yuan Wang, Yuhao Wang, Yaxin Ding, Yuting Chen, Zhiwei Dang, Lu Tai, Tiancheng Gong, Qing Luo, Xiangshui Miao, Qi Liu
Summary: This study systematically investigates the imprint mechanism in Hafnia-based ferroelectric capacitors using experiments and first-principles calculations. It reveals that charged oxygen vacancies induced by carrier injection are responsible for the imprint phenomenon, and proposes an imprint model based on electron de-trapping from oxygen vacancy sites to explain the experimental results. Furthermore, an effective imprint recovery method is proposed.
Article
Computer Science, Information Systems
Jinsong Wei, Jilin Zhang, Xumeng Zhang, Zuheng Wu, Rui Wang, Jian Lu, Tuo Shi, Mansun Chan, Qi Liu, Hong Chen
Summary: In this study, a neuromorphic core based on threshold switching memristors is designed to enable flexible communication between neurons. The experimental results show significant improvement in performance and energy efficiency of the neuromorphic core.
SCIENCE CHINA-INFORMATION SCIENCES
(2022)
Article
Chemistry, Multidisciplinary
Jiaxue Zhu, Xumeng Zhang, Rui Wang, Ming Wang, Pei Chen, Lingli Cheng, Zuheng Wu, Yongzhou Wang, Qi Liu, Ming Liu
Summary: This paper reports a compact multimode-fused spiking neuron that achieves human-like multisensory perception with excellent data compression and conversion capabilities. It supports multimodal tactile perception and has been validated for practical applications in tactile pattern recognition and object classification.
ADVANCED MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Jie Yu, Wenxuan Sun, Jinru Lai, Xu Zheng, Danian Dong, Qing Luo, Hangbing Lv, Xiaoxin Xu
Summary: This letter proposes a hardware-software co-design platform for implementing memristor crossbar arrays for ESN model and improves the network performance through the programming with delayed pulse scheme.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Jiaxue Zhu, Xumeng Zhang, Ming Wang, Rui Wang, Pei Chen, Lingli Cheng, Qi Liu
Summary: This letter reports an artificial spiking nociceptor integrating a pressure sensor and a NbOx-based memristor, which can emulate key features of biological nociceptors and is suitable for constructing efficient sensory systems and neural interfaces.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Multidisciplinary Sciences
Rui Wang, Tuo Shi, Xumeng Zhang, Jinsong Wei, Jian Lu, Jiaxue Zhu, Zuheng Wu, Qi Liu, Ming Liu
Summary: This article introduces a hardware implementation of self-organizing maps (SOM) based on memristors, which provides faster computing speed and energy efficiency compared to CMOS digital counterparts. The memristor-based SOM demonstrates improved performance in data clustering, image processing, and optimization problem-solving.
NATURE COMMUNICATIONS
(2022)
Article
Engineering, Electrical & Electronic
Jie Qiu, Jie Cao, Xusheng Liu, Pei Chen, Guan Feng, Xumeng Zhang, Ming Wang, Qi Liu
Summary: Researchers have developed a flexible organic electrochemical transistor-based synaptic device that can directly respond to biological neurotransmitters, exhibiting both short-term and long-term synaptic behaviors. The device shows reliable synaptic response and excellent mechanical flexibility under both flat and bending conditions, providing a promising approach for direct integration with soft biological tissues.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Danfeng Zhai, Wenning Jiang, Xinru Jia, Jingchao Lan, Mingqiang Guo, Sai-Weng Sin, Fan Ye, Qi Liu, Junyan Ren, Chixiao Chen
Summary: This paper introduces a neural network-based digital calibration algorithm for high-speed and time-interleaved ADCs. The algorithm is able to correct both amplitude-dependent and phase-dependent nonlinear distortion without prior knowledge of the ADC architecture. Experimental results demonstrate that the algorithm significantly improves the performance of the ADCs.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2022)
Article
Engineering, Electrical & Electronic
Guangjian Wu, Zefeng Zhang, Kun Ba, Xumeng Zhang, Jinhua Zeng, Chongyang Bai, Qi Liu, Jianlu Wang
Summary: The researchers report a hybrid MoS2/PbS quantum dots-based optoelectronic device with short-term memory properties for in-sensor reservoir computing (RC). They demonstrate that the device can effectively regulate the dynamic temporal photoresponse behavior through the photogating effect induced by incident optical intensity and time. The device shows high accuracy in image classifying and time series prediction, indicating its potential for intelligent edge computing.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Condensed Matter
Zhuohui Liu, Hai Zhong, Donggang Xie, Meng He, Can Wang, Hangbing Lyu, Guozhen Yang, Kuijuan Jin, Chen Ge
Summary: HfO2-based ferroelectrics, such as Hf0.5Zr0.5O2, have gained significant attention due to their compatibility with CMOS and robust nano-scale ferroelectricity. In this study, we fabricated 10 nm Hf0.5Zr0.5O2 epitaxial films and investigated the fatigue mechanism. Experimental data showed a 50% decrease in remanent ferroelectric polarization value after 10^8 cycles. Notably, the fatigued films could be recovered through electric stimulus. The fatigue of Hf0.5Zr0.5O2 films was attributed to phase transition between ferroelectric Pca2(1) and antiferroelectric Pbca, as well as defects generation and dipole pinning.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2023)
Article
Computer Science, Information Systems
Weishuang Liang, Qi Liu, Yebing Gan
Summary: This paper proposes a fractional frequency division phase-locked loop based on phase interpolation and implements it using the TSMC 0.11μm CMOS process. A digital time converter (DTC) module is added to reduce the fractional spurious by phase interpolation. The DTC module is calibration-free, and the error introduced by it is only related to the DAC adopted in the DTC. The proposed FNPLL achieves low power consumption, high accuracy, and low phase noise in both fractional and integer division modes.
Article
Automation & Control Systems
Wei Wang, Sen Liu, Qingjiang Li, Tuo Shi, Feng Zhang, Haijun Liu, Nan Li, Yongzhou Wang, Yi Sun, Bing Song, Hui Xu, Qi Liu
Summary: A novel Cu/alpha-Si/alpha-C/Pt memristor and direct resistance-coupling logic synthesis scheme for high-efficiency in-memory computing is presented in this study. The memristor exhibits excellent uniformity, fast switching speed, good endurance, and long retention. Complete set of Boolean logic and some derived logic operators are efficiently implemented in the Cu/alpha-Si/alpha-C/Pt crossbar array, demonstrating reconfigurable and parallel logic synthesis.
ADVANCED INTELLIGENT SYSTEMS
(2022)
