In situ observation of conducting filament in NiO memristive devices by electroluminescence

Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

(2016) Keundong Lee et al.   Scientific Reports

Scalability of valence change memory: From devices to tip-induced filaments

(2016) U. Celano et al.   AIP Advances

Filamentary resistance switching in phthalocyanine thin films observed by electroluminescence

(2015) Qingyu Meng et al.   APPLIED PHYSICS LETTERS

Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

(2015) Umberto Celano et al.   NANO LETTERS

Evolution of Ni nanofilaments and electromagnetic coupling in the resistive switching of NiO

(2015) Yuxiang Luo et al.   Nanoscale

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Tunable Electroluminescence in Planar Graphene/SiO2Memristors

(2013) Congli He et al.   ADVANCED MATERIALS

Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

(2013) Kazuki Nagashima et al.   APPLIED PHYSICS LETTERS

A light emitting device made from thin zirconium-doped hafnium oxide high-k dielectric film with or without an embedded nanocrystal layer

(2013) Yue Kuo et al.   APPLIED PHYSICS LETTERS

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

(2013) Hirofumi Kondo et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

(2013) Takashi Fujii et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic nanofilamentation in resistive switching

(2013) Xing Wu et al.   JOURNAL OF APPLIED PHYSICS

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

(2013) Jui-Yuan Chen et al.   NANO LETTERS

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

(2013) Gyeong-Su Park et al.   Nature Communications

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer

(2012) Huihui Huang et al.   APPLIED PHYSICS LETTERS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires

(2011) Li He et al.   NANO LETTERS

Defect conduction bands, localization, and temperature-dependent electron emission from Al–Al2O3–Au diodes

(2010) T. W. Hickmott   JOURNAL OF APPLIED PHYSICS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures

(2008) Chanwoo Park et al.   APPLIED PHYSICS LETTERS

Direct observation of conducting filaments on resistive switching of NiO thin films

(2008) J. Y. Son et al.   APPLIED PHYSICS LETTERS

CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

(2008) Sung Hyun Jo et al.   NANO LETTERS

Interaction and ordering of vacancy defects in NiO

(2008) Sohee Park et al.   PHYSICAL REVIEW B