Morphology and Number Density of Voids in Hydrogenated Amorphous Silicon: AnAb InitioStudy

标题
Morphology and Number Density of Voids in Hydrogenated Amorphous Silicon: AnAb InitioStudy
作者
关键词
-
出版物
Physical Review Applied
Volume 7, Issue 2, Pages -
出版商
American Physical Society (APS)
发表日期
2017-02-14
DOI
10.1103/physrevapplied.7.024013

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