期刊
NANOSCALE RESEARCH LETTERS
卷 12, 期 -, 页码 -出版社
SPRINGEROPEN
DOI: 10.1186/s11671-017-1831-4
关键词
Through-silicon via (TSV); Three-dimensional integrated circuit (3D IC)
资金
- Ministry of Education in Taiwan under the ATU Program
- Ministry of Science and Technology [MOST 103-2221-E-009-173-MY3, MOST 103-2221-E-009-193-MY3]
- NCTU-UCB I-RiCE program [MOST 105-2911-I-009-301]
3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.
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