Effect of a pH Regulator on Sapphire Substrate CMP

Removal rate and surface quality of the GLSI silicon substrate during the CMP process

(2017) Jiao Hong et al.   MICROELECTRONIC ENGINEERING

Role of a New Type Chelating Agent in Chemical Mechanical Polishing of R-Plane Sapphire Substrate

(2017) Xin Zhao et al.   ECS Journal of Solid State Science and Technology

Study on planarization machining of sapphire wafer with soft-hard mixed abrasive through mechanical chemical polishing

(2016) Yongchao Xu et al.   APPLIED SURFACE SCIENCE

Study on the processing characteristics of SiC and sapphire substrates polished by semi-fixed and fixed abrasive tools

(2016) Qiufa Luo et al.   TRIBOLOGY INTERNATIONAL

Fe-Nx/C assisted chemical–mechanical polishing for improving the removal rate of sapphire

(2015) Li Xu et al.   APPLIED SURFACE SCIENCE

A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing

(2015) Xiaolei Shi et al.   SURFACE & COATINGS TECHNOLOGY

Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers

(2015) Yan Zhou et al.   TRIBOLOGY INTERNATIONAL

Comparison between sapphire lapping processes using 2-body and 3-body modes as a function of diamond abrasive size

(2015) Hyuk-Min Kim et al.   WEAR

The Effect of pH on Sapphire Chemical Mechanical Polishing

(2015) W. Yan et al.   ECS Journal of Solid State Science and Technology

The influence of abrasive size on high-pressure chemical mechanical polishing of sapphire wafer

(2015) Chuljin Park et al.   International Journal of Precision Engineering and Manufacturing-Green Technology

Abrasive removal depth for polishing a sapphire wafer by a cross-patterned polishing pad with different abrasive particle sizes

(2014) Zone-Ching Lin et al.   INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY

Stability of weakly alkaline barrier slurry with the high selectivity

(2014) Xiaodong Luan et al.   MICROELECTRONIC ENGINEERING

Ultrasonic vibration-assisted scratch-induced characteristics of C-plane sapphire with a spherical indenter

(2012) Chenglong Zhang et al.   INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE

Mechanism of the interaction between Al2O3 and SiO2 during the chemical-mechanical polishing of sapphire with silicon dioxide

(2012) E. A. Vovk et al.   Journal of Surface Investigation-X-Ray Synchrotron and Neutron Techniques

Planarization machining of sapphire wafers with boron carbide and colloidal silica as abrasives

(2009) XiaoKai Hu et al.   APPLIED SURFACE SCIENCE