Memory selector devices and crossbar array design: a modeling-based assessment

Quasi-Analytical Model of 3-D Vertical-RRAM Array Architecture for MB-Level Design

(2017) Zhiwei Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modeling Size Limitations of Resistive Crossbar Array With Cell Selectors

(2017) Albert Ciprut et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

An efficient method for evaluating RRAM crossbar array performance

(2016) Lin Song et al.   SOLID-STATE ELECTRONICS

A review of emerging non-volatile memory (NVM) technologies and applications

(2016) An Chen   SOLID-STATE ELECTRONICS

Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array

(2015) Jeonghwan Song et al.   IEEE ELECTRON DEVICE LETTERS

One-Selector One-Resistor Cross-Point Array With Threshold Switching Selector

(2015) Leqi Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis of Partial Bias Schemes for the Writing of Crossbar Memory Arrays

(2015) An Chen   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nonlinearity and Asymmetry for Device Selection in Cross-Bar Memory Arrays

(2015) An Chen   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Performance Metal-Insulator-Metal Tunnel Diode Selectors

(2014) Bogdan Govoreanu et al.   IEEE ELECTRON DEVICE LETTERS

Write Scheme Allowing Reduced LRS Nonlinearity Requirement in a 3D-RRAM Array With Selector-Less 1TNR Architecture

(2014) Frederick T. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications

(2014) Leqi Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Crossbar RRAM Arrays: Selector Device Requirements During Write Operation

(2014) Sungho Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The Impact of n-p-n Selector-Based Bipolar RRAM Cross-Point on Array Performance

(2013) Raju Mandapati et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics

(2013) An Chen   IEEE TRANSACTIONS ON ELECTRON DEVICES

Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector–One Resistor Crossbar Array

(2012) Chun-Li Lo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Simple Device Unit Consisting of All NiO Storage and Switch Elements for Multilevel Terabit Nonvolatile Random Access Memory

(2011) Myoung-Jae Lee et al.   ACS Applied Materials & Interfaces

Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode

(2011) Wentai Lian et al.   IEEE ELECTRON DEVICE LETTERS

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

(2011) Myungwoo Son et al.   IEEE ELECTRON DEVICE LETTERS

Driving Device Comparison for Phase-Change Memory

(2011) Lin Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

(2011) Jungho Shin et al.   JOURNAL OF APPLIED PHYSICS

Capacity based nondestructive readout for complementary resistive switches

(2011) S Tappertzhofen et al.   NANOTECHNOLOGY

Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnOx/Pt and the effect of TiN layer on the improved resistance switching characteristics

(2011) K.H. Kim et al.   THIN SOLID FILMS

Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays

(2010) R. Rosezin et al.   IEEE ELECTRON DEVICE LETTERS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices

(2009) Byungjin Cho et al.   ADVANCED MATERIALS

New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

(2008) N. Huby et al.   MICROELECTRONIC ENGINEERING