期刊
THIN SOLID FILMS
卷 624, 期 -, 页码 41-48出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2017.01.013
关键词
Bismuth oxide; Reactive sputtering; Phase transition
类别
资金
- Swedish Foundation for Strategic Research (Future Research Leaders 5)
- Nordforsk [9046]
- Nordic Innovation Centre [09046]
- European Research Council (ERC) under the European Community's Seventh Framework Programme (FP)/ERC [335383]
- Swedish Research Council (VR) [2012-4430]
Bi2O3 thin films were grown using reactive RF sputtering from a metallic Bi target. The influence of various deposition parameters (substrate temperature, applied power on target and oxygen content in the working gas) on the morphology, structure and optical properties of films was investigated. Depending on the O-2/(Ar + O-2) ratio of the working gas, bismuth, delta-Bi2O3, alpha-Bi2O3 or a mixture of these phases can be deposited, with a narrow window for growth of [111]-oriented delta-Bi2O3 thin films. The delta-Bi2O3 phase is stable from room temperature up to 350 degrees C (in air), where an irreversible transition to alpha-Bi2O3 occurs. This phase transformation is also shown to occur during TEM sample preparation, because of the inherent heating from the ion-milling process, unless liquid -nitrogen cooling is used. (C) 2017 Published by Elsevier B.V.
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