Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse

标题

作者

关键词

Neutral beam, GaN, Gate recess, Current collapse, HEMTs

出版物

Volume 137, Issue -, Pages 1-5

出版商

Elsevier BV

发表日期

2017-07-27

DOI

10.1016/j.sse.2017.07.015

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