4.6 Article

Preparation and optical and photocatalytic properties of Ce-doped ZnO microstructures by simple solution method

期刊

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2017.09.001

关键词

ZnO; Ce-doped; Chemical synthesis; Optical property; Photocatalytic performance

资金

  1. National Natural Science Foundation of China [21203052]

向作者/读者索取更多资源

We prepared ZnO photocatalysts with different Ce-doping levels using a simple one-step solution method utilizing Zn(NO3)(2), Ce(NO3)(3), and NaOH as raw materials. X-ray diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, Brunauer-Emmett-Teller surface area analysis, ultraviolet-visible diffusion spectroscopy, and photoluminescence spectroscopy were used to characterize the products. Ce-doping greatly influences the size, morphology, and optical properties of the samples. The particle size of Ce/ZnO samples decreases and the specific surface area increases accordingly compared with that of pure ZnO. The optical absorption edge of the Ce/ZnO samples displays an obvious red shift. Moreover, the band gap energy decreases with the increasing Ce content. The Ce/ZnO samples exhibit significantly enhanced photocatalytic performance than pure ZnO. The 1% Ce/ZnO sample possesses excellent photocatalytic activity in decomposing methylene blue (MB). The MB degradation efficiency reaches 96.11% after 140 min of irradiation.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
Article Engineering, Electrical & Electronic

First principle examination of two dimensional rare-earth metal germanide halides Y2GeX2 (X = Cl, Br, I) for thermoelectric applications

Nishi Mehak, Bindu Rani, Aadil Fayaz Wani, Shakeel Ahmad Khandy, Ajay Singh Verma, Atif Mossad Ali, M. A. Sayed, Shobhna Dhiman, Kulwinder Kaur

Summary: In this study, the electronic, structural, and thermoelectric properties of newly designed layered rare-earth metal germanide halides were investigated. The materials showed promising thermoelectric performance, making them suitable candidates for energy harvesting in thermoelectric applications.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Article Engineering, Electrical & Electronic

High-performance blue light photodetector based on PANI/ CdS heterojunction

Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M. S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, Kashinath A. Bogle

Summary: This study presents the design and fabrication of a high-performance blue light photodetector using an n-type cadmium sulfide (CdS) thin film and a p-type polyaniline (PANI). The photodetector demonstrates exceptional performance characteristics, including high responsivity, detectivity, and sensitivity, along with rapid response time and rectification behavior. The research represents a significant advancement in the field of high-performance photodetectors.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Article Engineering, Electrical & Electronic

Investigating surface wear characteristics of single-crystal SiC based on metal electrochemical corrosion

Da Hu, Jiabin Lu, Qiusheng Yan, Yingrong Luo, Ziyuan Luo

Summary: This study introduces a chemical mechanical polishing technique based on metal electrochemical corrosion for single-crystal SiC to address the environmental pollution caused by the polishing solution in chemical mechanical polishing. Wear experiments were conducted to investigate the wear properties of SiC C-surface under different grinding ball materials and solutions. The proposed mechanism of material removal in single-crystal SiC via metal electrochemical corrosion was discussed.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Article Engineering, Electrical & Electronic

Numerical analysis and experimental research on the removal of CuO particles from monocrystalline silicon surfaces by picosecond laser

Lifang Mei, Long Lin, Dongbing Yan, Yu Liang, Yu Wu, Shuixuan Chen

Summary: This paper investigates the removal of CuO particles from silicon wafer surfaces using a picosecond laser. Numerical calculations and experimental research were conducted, and a thermal-stress coupled finite element model was established. The results show that as the laser energy density increases, the removal rate of CuO particles initially increases and then decreases, while the roughness of the silicon substrate decreases and then increases.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Article Engineering, Electrical & Electronic

Effect of Sn doping on low-temperature growth of Ge epilayers on half-metallic Co2FeSi

Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya

Summary: In this study, we demonstrated the low-temperature growth of a Ge layer on a Co-based Heusler alloy via Sn doping, which improved the magnetic properties and spin signal.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Article Engineering, Electrical & Electronic

Construction and photocatalytic performance of delafossite-type CuAlO2/ CuGaO2 heterostructure

Xiang-Long Wei, Bao-Feng Shan, Zong-Yan Zhao

Summary: This study synthesized and characterized a CuAlO2/CuGaO2 heterostructure and evaluated its photocatalytic performance. The heterostructure exhibited superior performance compared to individual CuAlO2 and CuGaO2 photocatalysts, with increased carrier concentration, enhanced redox capabilities, superior electrochemical stability, and reduced interfacial resistance. Photocatalytic experiments demonstrated the remarkable oxidation potential and notable reduction activity of the heterostructure, outperforming CuAlO2 and CuGaO2 in degradation rates and hydrogen production rates, respectively. These findings highlight the superior performance and broad applicability of the CuAlO2/CuGaO2 heterostructure in various photocatalytic reactions.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Article Engineering, Electrical & Electronic

Highlighting the role of 3C-SiC in the performance optimization of (Al,Ga) N-based High-Electron mobility transistors

Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude De Jaeger, Yvon Cordier

Summary: This study investigates the AlN nucleation layer issue in GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. It is shown that using 3C-SiC as an intermediate layer can significantly decrease RF propagation losses. Measurements and analyses demonstrate that dopant diffusion into the 3C-SiC pseudo-substrate is confined beneath the interface, and a slightly conductive zone is present beneath the AlN/3C-SiC interface, explaining the low propagation losses obtained for the devices. This work highlights the importance and efficiency of the 3C-SiC intermediate layer as a pseudo-substrate.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Article Engineering, Electrical & Electronic

Variation in properties of double-walled zigzag and armchair silicon nanotubes depending on SW defects and applied electric fields by SCC-DFTB method

Shuang Wang, Lijun Wu, Zhiqing Wang, Ziyue Qian

Summary: The geometric structure and electrical properties of zigzag and armchair DWSiNT perfect tubes with different Stone-Wales defects were simulated using the SCC-DFTB method. It was found that the atomic arrangement, stability, energy gap, and charge distribution strongly depend on the type of tube. The effects of strong and weak electric fields on the tubes were also investigated, showing different impact on stability and energy gap. These findings have implications for future experimental studies.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Article Engineering, Electrical & Electronic

Enhanced self-driven ultraviolet photodetection performance of high-k Ta2O5/GaN heterostructure

Nanda Kumar Reddy Nallabala, Sunil Singh Kushvaha, Sambasivam Sangaraju, Venkata Krishnaiah Kummara

Summary: This study focuses on the preparation and performance of MIS-type high-k dielectric oxide-based UV photodetectors. The researchers found that the Au/Ta2O5/GaN devices prepared on Ta2O5/GaN heterojunction with post-annealing exhibited improved photoresponsivity, EQE, and rise/fall times. This improvement is attributed to the optimized band configuration of the Ta2O5/GaN heterostructure and the effect of post-annealing on photogenerated charge carriers.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Article Engineering, Electrical & Electronic

Silicon-carbide-based MEMS for gas detection applications

Jean-Francois Michaud, Marc Portail, Daniel Alquier, Dominique Certon, Isabelle Dufour

Summary: This paper reviews the use of MEMS devices without sensitive layers in gas detection applications. These devices can measure a physical property of the gas to determine its concentration, and have the advantages of generality and high detection limits.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Article Engineering, Electrical & Electronic

High performance resistive random access memory based on Ag/TiO2 Nanorods/FTO for image recognition applications

Kanyu Yang, Chaojie Shi, Ruizhao Tian, Haoyue Deng, Jie He, Yangyang Qi, Zhengchun Yang, Jinshi Zhao, Zhen Fan, Jun Liu

Summary: This study investigates the electrical and synaptic properties of Ag/TiO2 nanorod/FTO-based RRAM devices, focusing on the impact of different seed layer thicknesses on nanorod thickness and RRAM performance. The devices show remarkable achievements in terms of endurance, self-compliance, and resistance switching ratio. The switching mechanism is attributed to space-charge-limited conduction resulting from electron trapping in oxygen vacancy traps. The devices also maintain stable synaptic properties even after undergoing multiple cycles of long-term potentiation and depression.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Article Engineering, Electrical & Electronic

Non-destructive mapping of electrical properties of semi-insulating compound semiconductor wafers using terahertz time-domain spectroscopy

Karthickraj Muthuramalingam, Wei-Chih Wang

Summary: This study presents a non-destructive approach using terahertz time-domain spectroscopy (THz-TDS) to estimate the electrical properties of semi-insulating compound semiconductors. The study successfully measures the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers using THz-TDS in transmission mode. The simplified Drude model and the Nelder-Mead algorithm are employed to estimate the electrical properties, and the results are in accordance with the manufacturer specifications. The feasibility of non-destructive mapping of the electrical properties is demonstrated, offering a promising tomographic inspection approach for online monitoring.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Article Engineering, Electrical & Electronic

Optimization of rear-side passivation for enhancing the performance of bifacial PERC plus solar cells

Pengfei Wei, Rui Tong, Xiaofeng Liu, Yao Wei, Yongan Zhang, Xu Liu, Jian Dai, Haipeng Yin, Dongming Liu

Summary: This study investigates the influence of SiNx and SiOxNy as rear-side passivation films on the performance of PERC+ cells. SiNx film is found to have better passivation performance and resistance to aluminum paste erosion, while SiOxNy film exhibits better optical performance. By designing multi-layer SiNx/SiOxNy/SiNx stacks, the cells' efficiency and bifaciality are significantly improved.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Article Engineering, Electrical & Electronic

Cobalt-doped β-Ni(OH)2 electrode fabricated by in-situ chemical corrosion for photo-assisted supercapacitor with low-temperature operation

Shuangting Ruan, Xiaolan Li, Wen Cui, Zhihui Zhang, Zhihui Xu, Huanqi Cao, Shougen Yin, Shishuai Sun

Summary: Integrating photosensitive electrode materials can effectively improve the low temperature tolerance and enhance energy density and power density. The surface morphology reconstruction technique can increase the active surface area and improve electrolyte contact, leading to higher specific capacity. Additionally, the electrodes demonstrate excellent photoelectric and photothermal conversion abilities, allowing the supercapacitor to maintain high energy density even at low temperatures.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

Review Engineering, Electrical & Electronic

CuInS2 and CuInS2-based nanostructures as photocatalysts

Ashmalina Rahman, James Robert Jennings, Mohammad Mansoob Khan

Summary: This review provides a comprehensive overview of the synthesis and applications of nanostructured CuInS2 in photocatalytic applications. Various strategies, including the introduction of dopants, surface decoration, and heterojunction formation, have been summarized to improve the photocatalytic performance of CuInS2. However, scientific challenges such as the high carrier recombination rate limit the broad application of CuInS2.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)