Article
Materials Science, Multidisciplinary
Jiawei Fu, Deren Yang, Xuegong Yu
Summary: This paper reviews the fundamentals and research progress of hyperdoped silicon and related infrared photodetectors. It discusses the hyperdoping mechanism and properties of superdoped silicon, as well as the fabrication methods and properties of hyperdoped silicon with different elements. Earlier research on chalcogen hyperdoping paved the way for the use of silicon in infrared photodetectors, while later research on transition metals hyperdoping provides new opportunities for improving device properties.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Materials Science, Multidisciplinary
Kejun Chen, Enrico Napolitani, Matteo De Tullio, Chun-Sheng Jiang, Harvey Guthrey, Francesco Sgarbossa, San Theingi, William Nemeth, Matthew Page, Paul Stradins, Sumit Agarwal, David L. Young
Summary: We demonstrate that nanosecond-scale pulsed laser melting (PLM) is an industrially viable technique to fabricate passivating contacts with controlled and high dopant concentration profiles in polycrystalline silicon (poly-Si) solar cells. By overcoming the solid solubility limit through rapid cooling and recrystallization, we achieved dopant concentrations in poly-Si that exceed its solubility limit in crystalline silicon (c-Si). The PLM-fabricated Ga-doped and B-doped contacts showed improved surface passivation and low contact resistivity in poly-Si/SiOx interfaces.
ENERGY & ENVIRONMENTAL MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Jiawei Fu, Jingkun Cong, Li Cheng, Deren Yang, Xuegong Yu
Summary: Developing a low-cost, room-temperature operated and CMOS compatible near infrared silicon photodetector is crucial for the advancement of all-silicon optoelectronic integrated circuits. In this study, a zinc-hyperdoped silicon-based photodetector with enhanced sub-bandgap photoresponse is presented, showing a wide range of infrared absorption. The Si:Zn photodetector demonstrates high responsivity, making it suitable for various applications due to its low cost, CMOS compatibility, and room-temperature operability.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Sashini Senali Dissanayake, Philippe K. Chow, Shao Qi Lim, Wenjie Yang, Rhoen Fiutak, Jim S. Williams, Jeffrey M. Warrender, Meng-Ju Sher
Summary: In recent years, infrared photodetectors made from silicon hyperdoped with deep-level dopants have shown extended light detection capabilities beyond the silicon's absorption range. However, the reported responsivities and quantum efficiencies are often low. Through a study on gold-hyperdoped silicon using time-resolved terahertz spectroscopy, we investigated the influence of hyperdoping parameters on charge carrier lifetimes. Our findings indicate that increasing gold concentrations, ion implantation energies, and laser melting fluences lead to a reduction in charge carrier lifetime. Additionally, the incorporation depths of dopants and the distribution profiles of carriers are also affected by ion implantation energy and laser fluence. These insights will benefit future device developments.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Optics
C. Wen, Z. Q. Shi, Z. J. Wang, J. X. Wang, Y. J. Yang, Y. J. Ma, W. B. Yang
Summary: New Zn-hyperdoped Si layers were prepared on polycrystalline Si substrates by vacuum evaporation and nanosecond laser melting. The layers achieved micron-level thickness, broad light absorption, and good electrical transport properties, providing a flexible and compatible solution for existing Si optoelectronic devices. The microstructural characteristics, Zn impurity distribution, and concentration of the hyperdoped Si layers were carefully studied to understand their preparation conditions and physical properties.
OPTICS AND LASER TECHNOLOGY
(2021)
Review
Chemistry, Physical
Chao Li, Ji-Hong Zhao, Zhan-Guo Chen
Summary: This review focuses on the infrared absorption and detection mechanism of hyper-doped silicon achieved by ion implantation and pulsed laser annealing. It emphasizes the impact of chalcogens and transition metals on the infrared absorption properties of hyper-doped silicon. The latest research on the responsivity and external quantum efficiency of photodetectors based on hyper-doped silicon is reviewed, along with suggestions for improving infrared absorption and device performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Optics
F. F. Komarov, I. N. Parkhomenko, O. Mil'chanin, G. D. Ivlev, L. A. Vlasukova, Yu Zuk, A. A. Tsivako, N. S. Koval'chuk
Summary: By using ion implantation and pulsed laser annealing, layers of selenium-hyperdoped silicon with high absorption and optimal structural perfection can be obtained, making them suitable for use in photodetectors and components of solar energy systems.
OPTICS AND SPECTROSCOPY
(2021)
Article
Spectroscopy
F. F. Komarov, L. A. Vlasukova, O. V. Milchanin, I. N. Parkhomenko, Y. Berencen, A. E. Alzhanova, Ting Wang, J. Zuk
Summary: Silicon layers with hyperdoped selenium impurities were obtained by high-dose ion implantation and pulsed laser annealing. The impurity concentration exceeded the equilibrium solubility limit of selenium in silicon by four orders of magnitude. About 70% of the impurity atoms were localized at silicon crystal-lattice sites after laser annealing, resulting in increased absorption in the spectral range of 1100-2400 nm. Thermal treatment did not increase the IR absorption, which was explained by the diffusional redistribution of selenium.
JOURNAL OF APPLIED SPECTROSCOPY
(2023)
Article
Physics, Applied
Soeren Schaefer, Patrick McKearney, Simon Paulus, Stefan Kontermann
Summary: An analytical optical model was established to simulate the absorption spectra of hyperdoped silicon. Different sample structures were fabricated by varying laser parameters. The study found that surface area enhancement was the main driving force behind the large sub-bandgap absorptance of the material.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Optics
Haibin Sun, Xiaolong Liu, Li Zhao, Jianxin Jia, Changhui Jiang, Jiamin Xiao, Yuwei Chen, Long Xu, Zhiyong Duan, Peng Rao, Shengli Sun
Summary: This study reveals the mechanism and influencing factors of infrared absorption in hyperdoped silicon through the measurement of optical absorptance and calculations based on coherent potential approximation. This has important implications for the optoelectronic applications of this material.
Article
Chemistry, Physical
Zhe-Yi Ren, Ji -Hong Zhao, Chao Li, Zhan-Guo Chen, Qi-Dai Chen
Summary: Hyperdoping technique introduces transition metals into silicon to enable silicon to operate in infrared wavebands, improving its infrared detection performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Physical
M. S. Shaikh, Mao Wang, R. Huebner, M. O. Liedke, M. Butterling, D. Solonenko, T. Madeira, Zichao Li, Yufang Xie, E. Hirschmann, A. Wagner, D. R. T. Zahn, M. Helm, Shengqiang Zhou
Summary: This study investigates the formation of defects in Te-hyperdoped Si layers during high-temperature thermal treatment, leading to electrical deactivation. Particularly, Te-rich clusters are observed at temperatures reaching 950 degrees C and above, suggested to be Si2Te3 based on polarized Raman analysis and transmission electron microscopy.
APPLIED SURFACE SCIENCE
(2021)
Article
Optics
Yalun Xu, Wei Li, Tian Yu, Yanyan Li, Ruiming Li, Qianqian Lin
Summary: The introduction of an interfacial modification strategy in perovskite photodiodes effectively slows down photovoltage decay, enabling easy detection of modulated light emitting diodes and ultra-fast pulsed-lasers. These photodetectors based on polyvinylidene fluoride exhibit low noise voltage and high responsivity, showing great potential for real applications.
LASER & PHOTONICS REVIEWS
(2021)
Article
Chemistry, Physical
Akshana Parameswaran Sreekala, Bindu Krishnan, Rene Fabian Cienfuegos Pelaes, David Avellaneda Avellaneda, Josue Amilcar Aguilar-Martinez, Sadasivan Shaji
Summary: This research investigates the fabrication and characterization of SnS-Si hybrids for photodetection and photocatalysis. The results show that post-deposition annealing improves the material properties of the hybrid films. The hybrid films exhibit good performance in terms of light detection and photocatalytic activity.
SURFACES AND INTERFACES
(2023)
Article
Physics, Applied
Shu-Yu Wen, Li He, Yuan-Hao Zhu, Jun-Wei Luo
Summary: We investigated the recrystallization behavior of bubble-rich amorphous germanium (a-Ge) containing argon (Ar) using conventional furnace annealing (FA) and excimer laser annealing (ELA). We found that ELA effectively suppresses the Ar bubbles and allows for good recrystallization of a-Ge, while FA only achieves partial recrystallization with many defects. Transmission electron microscopy results showed that ELA can transform the damaged layer induced by Ar implantation into a fully crystalline matrix with a low density of isolated bubbles. Our findings reveal the crucial role of Ar bubbles in the recrystallization behavior of a-Ge, offering a new approach to suppress implantation-induced gas bubbles in semiconductors for high-quality regrowth.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Physics, Applied
Philippe K. Chow, Wenjie Yang, Quentin Hudspeth, Shao Qi Lim, Jim S. Williams, Jeffrey M. Warrender
JOURNAL OF APPLIED PHYSICS
(2018)
Article
Physics, Applied
L. Q. Huston, A. Lugstein, J. S. Williams, J. E. Bradby
APPLIED PHYSICS LETTERS
(2018)
Review
Engineering, Electrical & Electronic
Tuan T. Tran, Jay Mathews, J. S. Williams
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2019)
Article
Optics
Joshua A. Burrow, Riad Yahiaoui, Andrew Sarangan, Jay Mathews, Imad Agha, Thomas A. Searles
Article
Physics, Applied
S. Q. Lim, A. J. Akey, E. Napolitani, P. K. Chow, J. M. Warrender, J. S. Williams
Summary: This study attempted to achieve Ag and Ti hyperdoping in Si using ion implantation and nanosecond pulsed-laser melting, but found that high concentrations of opto-electrically active Ag or Ti necessary to form an impurity band were not achieved. Additionally, there was no preferential lattice location for Ag or Ti found in the material. As a result, Au remains the only viable impurity to date for achieving the required level of hyperdoping in Si.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Chemistry, Multidisciplinary
Larissa Q. Huston, Alois Lugstein, Guoyin Shen, David A. Cullen, Bianca Haberl, Jim S. Williams, Jodie E. Bradby
Summary: High-pressure synthesis can create promising silicon allotropes, some of which have direct band gaps under tensile strain while others have narrow band gaps and good absorption properties. This study has discovered a new pressure-temperature pathway for producing silicon nanowires with transformative properties, opening up new possibilities for nanomaterial synthesis.
Article
Physics, Applied
Austin J. Akey, Jay Mathews, Jeffrey M. Warrender
Summary: APT is used to investigate the incorporation of Ti into Si through ion implantation and pulsed laser melting. Ti shows segregation in Si, with evidence of cellular breakdown morphology near the surface. Ti concentrations are generally below the Mott limit, confirming its behavior in line with conventional rapid solidification theory.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Sashini Senali Dissanayake, Philippe K. Chow, Shao Qi Lim, Wenjie Yang, Rhoen Fiutak, Jim S. Williams, Jeffrey M. Warrender, Meng-Ju Sher
Summary: In recent years, infrared photodetectors made from silicon hyperdoped with deep-level dopants have shown extended light detection capabilities beyond the silicon's absorption range. However, the reported responsivities and quantum efficiencies are often low. Through a study on gold-hyperdoped silicon using time-resolved terahertz spectroscopy, we investigated the influence of hyperdoping parameters on charge carrier lifetimes. Our findings indicate that increasing gold concentrations, ion implantation energies, and laser melting fluences lead to a reduction in charge carrier lifetime. Additionally, the incorporation depths of dopants and the distribution profiles of carriers are also affected by ion implantation energy and laser fluence. These insights will benefit future device developments.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Nanoscience & Nanotechnology
Sashini Senali Dissanayake, Nicole O. Pallat, Philippe K. Chow, Shao Qi Lim, Yining Liu, Qianao Yue, Rhoen Fiutak, Jay Mathews, Jim S. Williams, Jeffrey M. Warrender, Meng-Ju Sher
Summary: This study investigates the charge carrier lifetime of gold-hyperdoped silicon using terahertz spectroscopy and explores the impact of dopant concentration profiles on carrier dynamics. The results show that the dopant distribution profile heavily influences the excited carrier dynamics, and etching can improve the carrier lifetime. Furthermore, gold dopants act as both light absorption centers and recombination centers in the short-wave infrared range. The study suggests that dopant profile engineering is crucial for building efficient optoelectronic devices using hyperdoped semiconductors.
Proceedings Paper
Engineering, Electrical & Electronic
J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, D. Lombardo, I. Agha, J. Kouvetakis, J. Menendez
2018 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM)
(2018)
Proceedings Paper
Engineering, Electrical & Electronic
Elaheh Ghanati, Gary Sevison, Chaio Chang, Hao-Cheng Lin, Hung-Hsiang, Li Hui, Joshua Hendrickson, Richard. Soref, Greg. Sun, Jay Mathews
2018 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM)
(2018)
Proceedings Paper
Optics
Riad Yahiaoui, Joshua A. Burrow, Gary Sevison, Andrew Sarangan, Jay Mathews, Imad Agha, Augustine M. Urbas, Thomas A. Searles
2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID)
(2018)
Article
Materials Science, Multidisciplinary
R. Yahiaoui, J. A. Burrow, S. M. Mekonen, A. Sarangan, J. Mathews, I. Agha, T. A. Searles
Article
Engineering, Electrical & Electronic
Nishi Mehak, Bindu Rani, Aadil Fayaz Wani, Shakeel Ahmad Khandy, Ajay Singh Verma, Atif Mossad Ali, M. A. Sayed, Shobhna Dhiman, Kulwinder Kaur
Summary: In this study, the electronic, structural, and thermoelectric properties of newly designed layered rare-earth metal germanide halides were investigated. The materials showed promising thermoelectric performance, making them suitable candidates for energy harvesting in thermoelectric applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M. S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, Kashinath A. Bogle
Summary: This study presents the design and fabrication of a high-performance blue light photodetector using an n-type cadmium sulfide (CdS) thin film and a p-type polyaniline (PANI). The photodetector demonstrates exceptional performance characteristics, including high responsivity, detectivity, and sensitivity, along with rapid response time and rectification behavior. The research represents a significant advancement in the field of high-performance photodetectors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Da Hu, Jiabin Lu, Qiusheng Yan, Yingrong Luo, Ziyuan Luo
Summary: This study introduces a chemical mechanical polishing technique based on metal electrochemical corrosion for single-crystal SiC to address the environmental pollution caused by the polishing solution in chemical mechanical polishing. Wear experiments were conducted to investigate the wear properties of SiC C-surface under different grinding ball materials and solutions. The proposed mechanism of material removal in single-crystal SiC via metal electrochemical corrosion was discussed.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Lifang Mei, Long Lin, Dongbing Yan, Yu Liang, Yu Wu, Shuixuan Chen
Summary: This paper investigates the removal of CuO particles from silicon wafer surfaces using a picosecond laser. Numerical calculations and experimental research were conducted, and a thermal-stress coupled finite element model was established. The results show that as the laser energy density increases, the removal rate of CuO particles initially increases and then decreases, while the roughness of the silicon substrate decreases and then increases.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Summary: In this study, we demonstrated the low-temperature growth of a Ge layer on a Co-based Heusler alloy via Sn doping, which improved the magnetic properties and spin signal.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Xiang-Long Wei, Bao-Feng Shan, Zong-Yan Zhao
Summary: This study synthesized and characterized a CuAlO2/CuGaO2 heterostructure and evaluated its photocatalytic performance. The heterostructure exhibited superior performance compared to individual CuAlO2 and CuGaO2 photocatalysts, with increased carrier concentration, enhanced redox capabilities, superior electrochemical stability, and reduced interfacial resistance. Photocatalytic experiments demonstrated the remarkable oxidation potential and notable reduction activity of the heterostructure, outperforming CuAlO2 and CuGaO2 in degradation rates and hydrogen production rates, respectively. These findings highlight the superior performance and broad applicability of the CuAlO2/CuGaO2 heterostructure in various photocatalytic reactions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude De Jaeger, Yvon Cordier
Summary: This study investigates the AlN nucleation layer issue in GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. It is shown that using 3C-SiC as an intermediate layer can significantly decrease RF propagation losses. Measurements and analyses demonstrate that dopant diffusion into the 3C-SiC pseudo-substrate is confined beneath the interface, and a slightly conductive zone is present beneath the AlN/3C-SiC interface, explaining the low propagation losses obtained for the devices. This work highlights the importance and efficiency of the 3C-SiC intermediate layer as a pseudo-substrate.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuang Wang, Lijun Wu, Zhiqing Wang, Ziyue Qian
Summary: The geometric structure and electrical properties of zigzag and armchair DWSiNT perfect tubes with different Stone-Wales defects were simulated using the SCC-DFTB method. It was found that the atomic arrangement, stability, energy gap, and charge distribution strongly depend on the type of tube. The effects of strong and weak electric fields on the tubes were also investigated, showing different impact on stability and energy gap. These findings have implications for future experimental studies.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Nanda Kumar Reddy Nallabala, Sunil Singh Kushvaha, Sambasivam Sangaraju, Venkata Krishnaiah Kummara
Summary: This study focuses on the preparation and performance of MIS-type high-k dielectric oxide-based UV photodetectors. The researchers found that the Au/Ta2O5/GaN devices prepared on Ta2O5/GaN heterojunction with post-annealing exhibited improved photoresponsivity, EQE, and rise/fall times. This improvement is attributed to the optimized band configuration of the Ta2O5/GaN heterostructure and the effect of post-annealing on photogenerated charge carriers.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Jean-Francois Michaud, Marc Portail, Daniel Alquier, Dominique Certon, Isabelle Dufour
Summary: This paper reviews the use of MEMS devices without sensitive layers in gas detection applications. These devices can measure a physical property of the gas to determine its concentration, and have the advantages of generality and high detection limits.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Kanyu Yang, Chaojie Shi, Ruizhao Tian, Haoyue Deng, Jie He, Yangyang Qi, Zhengchun Yang, Jinshi Zhao, Zhen Fan, Jun Liu
Summary: This study investigates the electrical and synaptic properties of Ag/TiO2 nanorod/FTO-based RRAM devices, focusing on the impact of different seed layer thicknesses on nanorod thickness and RRAM performance. The devices show remarkable achievements in terms of endurance, self-compliance, and resistance switching ratio. The switching mechanism is attributed to space-charge-limited conduction resulting from electron trapping in oxygen vacancy traps. The devices also maintain stable synaptic properties even after undergoing multiple cycles of long-term potentiation and depression.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Karthickraj Muthuramalingam, Wei-Chih Wang
Summary: This study presents a non-destructive approach using terahertz time-domain spectroscopy (THz-TDS) to estimate the electrical properties of semi-insulating compound semiconductors. The study successfully measures the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers using THz-TDS in transmission mode. The simplified Drude model and the Nelder-Mead algorithm are employed to estimate the electrical properties, and the results are in accordance with the manufacturer specifications. The feasibility of non-destructive mapping of the electrical properties is demonstrated, offering a promising tomographic inspection approach for online monitoring.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Pengfei Wei, Rui Tong, Xiaofeng Liu, Yao Wei, Yongan Zhang, Xu Liu, Jian Dai, Haipeng Yin, Dongming Liu
Summary: This study investigates the influence of SiNx and SiOxNy as rear-side passivation films on the performance of PERC+ cells. SiNx film is found to have better passivation performance and resistance to aluminum paste erosion, while SiOxNy film exhibits better optical performance. By designing multi-layer SiNx/SiOxNy/SiNx stacks, the cells' efficiency and bifaciality are significantly improved.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuangting Ruan, Xiaolan Li, Wen Cui, Zhihui Zhang, Zhihui Xu, Huanqi Cao, Shougen Yin, Shishuai Sun
Summary: Integrating photosensitive electrode materials can effectively improve the low temperature tolerance and enhance energy density and power density. The surface morphology reconstruction technique can increase the active surface area and improve electrolyte contact, leading to higher specific capacity. Additionally, the electrodes demonstrate excellent photoelectric and photothermal conversion abilities, allowing the supercapacitor to maintain high energy density even at low temperatures.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Review
Engineering, Electrical & Electronic
Ashmalina Rahman, James Robert Jennings, Mohammad Mansoob Khan
Summary: This review provides a comprehensive overview of the synthesis and applications of nanostructured CuInS2 in photocatalytic applications. Various strategies, including the introduction of dopants, surface decoration, and heterojunction formation, have been summarized to improve the photocatalytic performance of CuInS2. However, scientific challenges such as the high carrier recombination rate limit the broad application of CuInS2.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)