Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO 2 and fabricated at low temperature

出版年份 2017 全文链接

标题

作者

关键词

HfO, 2, Oxygen vacancy, ReRAM, Resistive switching, Low thermal budget

出版物

Volume 66, Issue -, Pages 191-199

出版商

Elsevier BV

发表日期

2017-05-25

DOI

10.1016/j.mssp.2017.05.001

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