☆ 4.4 Article Proceedings Paper

Effect of post-deposition annealing on low temperature metalorganic chemical vapor deposited gallium oxide related materials

JOURNAL OF CRYSTAL GROWTH (2017)

期刊

JOURNAL OF CRYSTAL GROWTH

卷 468, 期 -, 页码 129-134

出版社

ELSEVIER SCIENCE BV

DOI: 10.1016/j.jcrysgro.2016.11.005

关键词

Characterization; Metalorganic chemical vapor deposition; Polycrystalline deposition; Gallium compounds; Oxides

类别

Crystallography Materials Science, Multidisciplinary Physics, Applied

资金

JSPS KAKENHI [15K14299]
Grants-in-Aid for Scientific Research [15K14299] Funding Source: KAKEN

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Protocol

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摘要

Low temperature metalorganic chemical vapor deposition using trimethylgallium and water was investigated. The surface morphology of the film was almost flat at a deposition temperature below 182 degrees C. This flat film was a mixture of nanocrystalline and amorphous phase. The film deposited at a temperature of 272 degrees C resulted in a nanowire structure. X-ray diffraction measurements revealed that the nanowire film was a mixture of gallium hydroxide, gallium oxyhydroxide, and gallium tohdite or gallium oxide. We also found that post-deposition annealing above 600 degrees C significantly changed the crystal structure of the both flat and nanowire films. Monoclinic gallium oxide phase was dominant after the post-deposition annealing above 600 degrees C.

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Peter Rudolph

Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.

JOURNAL OF CRYSTAL GROWTH (2024)

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