Effect of asymmetric strain relaxation on dislocation relaxation processes in heteroepitaxial semiconductors

Materials genomics of thin film strain relaxation by misfit dislocations

(2015) R. Hull et al.   JOURNAL OF APPLIED PHYSICS

Relaxation Dynamics and Threading Dislocations in ZnSe and ZnS y Se1−y /GaAs (001) Heterostructures

(2013) T. Kujofsa et al.   JOURNAL OF ELECTRONIC MATERIALS

a-Type edge dislocation mobility in wurtzite GaN using molecular dynamics

(2013) N. Scott Weingarten et al.   SCRIPTA MATERIALIA

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

(2012) H. Trinkaus et al.   JOURNAL OF APPLIED PHYSICS

Formation of compressively strained SiGe/Si(110) heterostructures and their characterization

(2012) Keisuke Arimoto et al.   JOURNAL OF CRYSTAL GROWTH

High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

(2011) A. Zhylik et al.   JOURNAL OF APPLIED PHYSICS

Strain tensors in layer systems by precision ion channeling measurements

(2010) H. Trinkaus et al.   JOURNAL OF APPLIED PHYSICS

Strains and rotations in thin deposited films

(2010) J.P. Hirth et al.   PHILOSOPHICAL MAGAZINE

Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers

(2009) R. A. Minamisawa et al.   APPLIED PHYSICS LETTERS

Strain relaxation in AlGaN multilayer structures by inclined dislocations

(2009) D. M. Follstaedt et al.   JOURNAL OF APPLIED PHYSICS

Formation of uniaxially strained SiGe by selective ion implantation technique

(2009) Kentarou Sawano et al.   THIN SOLID FILMS

Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111)

(2008) V. Destefanis et al.   JOURNAL OF CRYSTAL GROWTH

Characterization of anisotropic relaxation rate of SGOI (110) substrates

(2008) Yoshihiko Moriyama et al.   THIN SOLID FILMS