High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

High Quality Strained Ge Epilayers on a Si[sub 0.2]Ge[sub 0.8]/Ge/Si(100) Global Strain-Tuning Platform

(2010) Maksym Myronov et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

(2010) V. A. Shah et al.   JOURNAL OF APPLIED PHYSICS

Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization

(2009) Duygu Kuzum et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

X-ray diffraction peaks from partially ordered misfit dislocations

(2009) Vladimir M. Kaganer et al.   PHYSICAL REVIEW B

X-ray dynamical diffraction from partly relaxed epitaxial structures

(2009) A. I. Benediktovich et al.   PHYSICAL REVIEW B

Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates

(2009) Keisuke Arimoto et al.   SOLID-STATE ELECTRONICS

Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

(2008) V. A. Shah et al.   APPLIED PHYSICS LETTERS

Diffuse X-ray scattering from graded SiGe/Si layers

(2008) S. Daniš et al.   EPL

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

(2008) Shinichi Takagi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A complex x-ray characterization of heteroepitaxial silicon/insulator/silicon(111) structures

(2008) P. Zaumseil et al.   JOURNAL OF APPLIED PHYSICS

Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111)

(2008) V. Destefanis et al.   JOURNAL OF CRYSTAL GROWTH