Iron doped InGaAs: Competitive THz emitters and detectors fabricated from the same photoconductor
出版年份 2017 全文链接
标题
Iron doped InGaAs: Competitive THz emitters and detectors fabricated from the same photoconductor
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 121, Issue 5, Pages 053102
出版商
AIP Publishing
发表日期
2017-02-01
DOI
10.1063/1.4975039
参考文献
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- (2015) Ralf Müller et al. Journal of Infrared Millimeter and Terahertz Waves
- Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation
- (2015) O. Hatem et al. Journal of Infrared Millimeter and Terahertz Waves
- Absolute terahertz power measurement of a time-domain spectroscopy system
- (2015) Björn Globisch et al. OPTICS LETTERS
- Carrier dynamics in Beryllium doped low-temperature-grown InGaAs/InAlAs
- (2014) B. Globisch et al. APPLIED PHYSICS LETTERS
- Terahertz-time domain spectrometer with 90 dB peak dynamic range
- (2014) N. Vieweg et al. Journal of Infrared Millimeter and Terahertz Waves
- Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range
- (2014) Roman J.B. Dietz et al. OPTICS EXPRESS
- 64 μW pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions
- (2013) Roman J. B. Dietz et al. APPLIED PHYSICS LETTERS
- Simulation of fluence-dependent photocurrent in terahertz photoconductive receivers
- (2012) E Castro-Camus et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55 $\mu{\hbox{m}}$ Pulse Excitation
- (2012) Ioannis Kostakis et al. IEEE Transactions on Terahertz Science and Technology
- Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs
- (2011) O. Hatem et al. APPLIED PHYSICS LETTERS
- Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to 1.55 μm excitation
- (2010) C. D. Wood et al. APPLIED PHYSICS LETTERS
- Terahertz emission characteristics of ErAs:InGaAs-based photoconductive antennas excited at 1.55 μm
- (2010) A. Schwagmann et al. APPLIED PHYSICS LETTERS
- Femtosecond carrier dynamics in native and high resistivity iron-doped GaxIn1−xAs
- (2010) Suranjana Sengupta et al. JOURNAL OF APPLIED PHYSICS
- Semiconductors for terahertz photonics applications
- (2010) Arūnas Krotkus JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Next generation 15 µm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers
- (2010) H. Roehle et al. OPTICS EXPRESS
- Ultrafast carrier mobilities in high-resistivity iron-doped Ga0.69In0.31As photoconducting antennas
- (2009) Suranjana Sengupta et al. APPLIED PHYSICS LETTERS
- Effect of defect saturation on terahertz emission and detection properties of low temperature GaAs photoconductive switches
- (2009) Samir Rihani et al. APPLIED PHYSICS LETTERS
- All-fiber terahertz time-domain spectrometer operating at 1.5 μm telecom wavelengths
- (2008) B. Sartorius et al. OPTICS EXPRESS
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