Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range

Carrier dynamics in Beryllium doped low-temperature-grown InGaAs/InAlAs

(2014) B. Globisch et al.   APPLIED PHYSICS LETTERS

64 μW pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions

(2013) Roman J. B. Dietz et al.   APPLIED PHYSICS LETTERS

Simulation of fluence-dependent photocurrent in terahertz photoconductive receivers

(2012) E Castro-Camus et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

THz generation at 155 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions

(2011) Roman J. B. Dietz et al.   OPTICS EXPRESS

Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to 1.55 μm excitation

(2010) C. D. Wood et al.   APPLIED PHYSICS LETTERS

Terahertz emission characteristics of ErAs:InGaAs-based photoconductive antennas excited at 1.55 μm

(2010) A. Schwagmann et al.   APPLIED PHYSICS LETTERS

Next generation 15 µm terahertz antennas: 
mesa-structuring of 
InGaAs/InAlAs photoconductive layers

(2010) H. Roehle et al.   OPTICS EXPRESS

Photoconductive response correction for detectors of terahertz radiation

(2008) E. Castro-Camus et al.   JOURNAL OF APPLIED PHYSICS

All-fiber terahertz time-domain spectrometer operating at 1.5 μm telecom wavelengths

(2008) B. Sartorius et al.   OPTICS EXPRESS