期刊
CRYSTALS
卷 6, 期 10, 页码 -出版社
MDPI AG
DOI: 10.3390/cryst6100128
关键词
URu2Si2; hidden order; single crystal; molten metal flux; Bridgman
资金
- National Science Foundation [DMR-0084173]
- State of Florida
- DOE
- NHMFL User Collaboration Grant Program (UCGP)
We describe a modified Bridgman growth technique to produce single crystals of the strongly correlated electron material URu2Si2 and its nonmagnetic analogue ThRu2Si2. Bulk thermodynamic and electrical transport measurements show that the properties of crystals produced in this way are comparable to those previously synthesized using the Czochralski or conventional molten metal flux growth techniques. For the specimens reported here, we find residual resistivity ratios RRR = rho(300K)/rho(0) as large as 116 and 187 for URu2Si2 and ThRu2Si2, respectively.
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