Analysis of Current-Voltage-Temperature and Capacitance-Voltage-Temperature Characteristics of Re/n-Si Schottky Contacts

Titanium alloyed with rhenium by selective laser melting

(2015) Edward Chlebus et al.   MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING

The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

(2014) Halil Özerli et al.   MATERIALS RESEARCH BULLETIN

Electrical properties and the double Gaussian distribution of inhomogeneous barrier heights in Se/n-GaN Schottky barrier diode

(2014) V. Rajagopal Reddy et al.   SUPERLATTICES AND MICROSTRUCTURES

Phase transition induced double-Gaussian barrier height distribution in Schottky diode

(2013) A. Bobby et al.   PHYSICA B-CONDENSED MATTER

Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)

(2013) H. Tecimer et al.   SENSORS AND ACTUATORS A-PHYSICAL

Schottky diode properties of CuInSe2 films prepared by a two-step growth technique

(2012) H. Tecimer et al.   SENSORS AND ACTUATORS A-PHYSICAL

Dependence of characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts

(2011) K. Ejderha et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Temperature-dependent Schottky barrier inhomogeneity of Ni/n-GaAs diodes

(2009) N. Yildirim et al.   EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS

Effect of ion irradiation on current–voltage characteristics of Au/n-GaN Schottky diodes

(2009) V. Baranwal et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Temperature dependence of current-voltage characteristics in highly doped Ag/p-GaN/In Schottky diodes

(2009) K. Çınar et al.   JOURNAL OF APPLIED PHYSICS

Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts

(2009) M Mamor   JOURNAL OF PHYSICS-CONDENSED MATTER

Inorganic–organic photodiodes based on polyaniline doped boric acid and polyaniline doped boric acid:nickel(II) phthalocyanine composite

(2009) Fahrettin Yakuphanoglu et al.   SENSORS AND ACTUATORS A-PHYSICAL

Temperature-dependent current–voltage and capacitance–voltage characteristics of the Ag/n-InP/In Schottky diodes

(2008) F. E. Cimilli et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Barrier characteristics of gold Schottky contacts on moderately doped n-InP based on temperature dependent I–V and C–V measurements

(2008) M. Soylu et al.   MICROELECTRONIC ENGINEERING

Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode

(2008) H. Benmaza et al.   MICROELECTRONICS JOURNAL

Analysis of interface states of metal–insulator–semiconductor photodiode with n-type silicon by conductance technique

(2008) Fahrettin Yakuphanoglu   SENSORS AND ACTUATORS A-PHYSICAL